Inventor profile of:

Yi Cui

City:

San Jose, California

Country:

United States

Published Applications:

17

Last publication date:

2023-08-31

Top Assignees for applications by Yi Cui

The entities that hold a legal rights for patent applications filed by inventor Cui Yi:

Recent patent applications by Cui Yi

Yi Cui from San Jose, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-08-31
US20230274997A1
Electricity

Nitrogen-rich silicon nitride films for thin film transistors

#2 | 2021-09-16
US20210287955A1
Electricity

Nitrogen-rich silicon nitride films for thin film transistors

#3 | 2021-03-04
US20210066153A1
Electricity

Nitrogen-rich silicon nitride films for thin film transistors

#4 | 2021-02-11
US20210043757A1
Electricity

Plasma treatment on metal-oxide TFT

#5 | 2020-12-31
US20200412657A1
Electricity

Congestion control for low latency datacenter networks

#6 | 2020-02-20
US20200058497A1
Electricity

Silicon nitride forming precursor control

#7 | 2019-12-19
US20190382891A1
Chemistry; metallurgy

METHOD AND SOLUTION FOR RESOLVING CGT MURA ISSUE

#8 | 2019-03-28
US20190096624A1
Electricity

Shadow frame with sides having a varied profile for improved deposition uniformity

#9 | 2018-05-24
US20180145157A1
Electricity

Plasma treatment on metal-oxide TFT

#10 | 2017-12-21
US20170365449A1
Electricity

RF RETURN STRAP SHIELDING COVER

#11 | 2017-11-23
US20170335459A1
Chemistry; metallurgy

NON-SHADOW FRAME PLASMA PROCESSING CHAMBER

#12 | 2017-01-12
US20170012064A1
Electricity

SiON gradient concept

#13 | 2016-07-28
US20160218000A1
Electricity

Plasma treatment on metal-oxide TFT

#14 | 2014-09-18
US20140272187A1
Chemistry; metallurgy

ADHESION IMPROVEMENT BETWEEN CVD DIELECTRIC FILM AND CU SUBSTRATE

#15 | 2014-06-26
US20140174361A1
Chemistry; metallurgy

HEATED BACKING PLATE

#16 | 2014-01-30
US20140030056A1
Mechanical engineering

PROCESS GAS FLOW GUIDES FOR LARGE AREA PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS AND METHODS

#17 | 2013-04-11
US20130087783A1
Electricity

Methods for depositing a silicon containing layer with argon gas dilution

InventorID:

183107 ⎘