Inventor profile of:

Halid MULAOSMANOVIC

City:

Dresden

Country:

Germany

Published Applications:

16

Last publication date:

2026-02-12

Top Assignees for applications by Halid MULAOSMANOVIC

The entities that hold a legal rights for patent applications filed by inventor MULAOSMANOVIC Halid:

Recent patent applications by MULAOSMANOVIC Halid

Halid MULAOSMANOVIC from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-02-12
US20260047093A1
Electricity

SEMICONDUCTOR DEVICES AND METHODS OF FORMING SEMICONDUCTOR DEVICES USING LATERAL SOLID-PHASE EPITAXY

#2 | 2025-09-18
US20250293686A1
Electricity

DEVICE WITH INVERTER FUNCTIONALITY AND TUNABLE TRIGGER VOLTAGE

#3 | 2025-08-28
US20250275223A1
Electricity

BIPOLAR TRANSISTOR STRUCTURE WITH FERROELECTRIC MATERIAL

#4 | 2025-07-10
US20250228009A1
Electricity

BIPOLAR TRANSISTOR BASE STRUCTURE COUPLED TO FIELD EFFECT TRANSISTOR GATE STRUCTURE

#5 | 2025-07-10
US20250227999A1
Electricity

CRYSTALLINE SEMICONDUCTOR LAYER BETWEEN BIPOLAR TRANSISTOR AND FIELD EFFECT TRANSISTOR STRUCTURES

#6 | 2025-07-10
US20250227943A1
Electricity

HETEROJUNCTION BIPOLAR TRANSISTORS INCLUDING AN INTRINSIC BASE WITH AN ASYMMETRICAL DOPANT DEPTH PROFILE

#7 | 2025-06-17
US18802233
Electricity

IC structure with MFMIS memory cell and CMOS transistor

#8 | 2025-06-12
US20250194098A1
Electricity

STRUCTURE WITH FERROELECTRIC MEMORY STACKS HAVING DIFFERENT SWITCHING VOLTAGES AND RELATED METHODS

#9 | 2025-05-15
US20250159905A1
Electricity

SWITCHING MEMORY ELEMENTS ACCESSED BY HETEROJUNCTION BIPOLAR TRANSISTORS

#10 | 2024-06-13
US20240194253A1
Physics

Non-volatile static random access memory bit cells with ferroelectric field-effect transistors

#11 | 2024-04-11
US20240120420A1
Electricity

Ferroelectric field-effect transistors with a hybrid well

#12 | 2024-01-11
US20240014320A1
Electricity

Structures for a ferroelectric field-effect transistor and related methods

#13 | 2020-02-27
US20200065647A1
Physics

Artificial neuron based on ferroelectric circuit element

#14 | 2019-06-06
US20190172539A1
Physics

Polarization-based configurable logic gate

#15 | 2018-03-22
US20180082729A1
Physics

Multilevel ferroelectric memory cell for an integrated circuit

#16 | 2017-06-08
US20170162250A1
Physics

Multilevel ferroelectric memory cell for an integrated circuit

InventorID:

1898205 ⎘