Dresden
Germany
21
2025-09-18
21
2026-02-24
These are the the leading inventors for applications assigned to NaMLab gGmbH:
NaMLab gGmbH based in Dresden, DE has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
POLARIZABLE DEVICE WITH CURRENT COMPLIANCE FOR POLARIZATION CONTROL
#2 | 2023-10-12 ✅ Patent 12,094,964 granted on 2024-09-17Heterostructure of an electronic circuit having a semiconductor device
#3 | 2021-07-01 ✅ Patent 11,515,428 granted on 2022-11-29Semiconductor device structure having multiple gate terminals
#4 | 2020-11-12 ✅ Patent 11,205,467 granted on 2021-12-21Ferroelectric memory and logic cell and operation method
#5 | 2020-11-05 ✅ Patent 11,145,665 granted on 2021-10-12Electrical storage device with negative capacitance
#6 | 2020-02-27 ✅ Patent 10,963,776 granted on 2021-03-30Artificial neuron based on ferroelectric circuit element
#7 | 2020-01-16 ✅ Patent 11,699,749 granted on 2023-07-11Heterostructure of an electronic circuit having a semiconductor device
#8 | 2019-06-06 ✅ Patent 10,424,379 granted on 2019-09-24Polarization-based configurable logic gate
#9 | 2019-03-07 ✅ Patent 10,600,808 granted on 2020-03-24Ferroelectric memory cell for an integrated circuit
#10 | 2018-06-14 ✅ Patent 10,872,905 granted on 2020-12-22Integrated circuit including a ferroelectric memory cell and manufacturing method thereof
#11 | 2018-05-31 ✅ Patent 11,424,253 granted on 2022-08-23Device including a floating gate electrode and a layer of ferroelectric material and method for the formation thereof
#12 | 2018-03-22 ✅ Patent 10,043,567 granted on 2018-08-07Multilevel ferroelectric memory cell for an integrated circuit
#13 | 2018-01-11 ✅ Patent 10,347,760 granted on 2019-07-09Reconfigurable nanowire field effect transistor, a nanowire array and an integrated circuit thereof
#14 | 2017-09-07 ✅ Patent 10,056,393 granted on 2018-08-21Application of antiferroelectric like materials in non-volatile memory devices
#15 | 2017-06-08 ✅ Patent 9,830,969 granted on 2017-11-28Multilevel ferroelectric memory cell for an integrated circuit
#16 | 2017-03-16 ✅ Patent 9,818,468 granted on 2017-11-14Charge storage ferroelectric memory hybrid and erase scheme
#17 | 2016-09-15 ✅ Patent 9,865,608 granted on 2018-01-09Method of forming a device including a floating gate electrode and a layer of ferroelectric material
#18 | 2016-01-28 ✅ Patent 9,558,804 granted on 2017-01-31Charge storage ferroelectric memory hybrid and erase scheme
#19 | 2014-12-04 ✅ Patent 9,053,802 granted on 2015-06-09Ferroelectric memory cell for an integrated circuit
#20 | 2012-11-15 ✅ Patent 8,946,617 granted on 2015-02-03Photodiode having a p-n junction with varying expansion of the space charge zone due to application of a variable voltage
#21 | 2009-10-22 ✅ Patent 8,304,823 granted on 2012-11-06Integrated circuit including a ferroelectric memory cell and method of manufacturing the same
Also check out NaMLab gGmbH's (Dresden, Germany) applicant profile with 21 patent applications submitted.
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