Thomas Feil

Planar gate semiconductor device with oxygen-doped Si-layers

SEMICONDUCTOR DIE WITH A TRANSISTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DIE WITH A VERTICAL TRANSISTOR DEVICE

Composite wafer, semiconductor device and electronic component

Semiconductor package and methods of manufacturing a semiconductor package

SEMICONDUCTOR DEVICE HAVING BODY CONTACT REGIONS AND CORRESPONDING METHODS OF MANUFACTURE

Transistor device with a field electrode that includes two layers

Semiconductor transistor device and method of manufacturing the same

Transistor device with a field electrode that includes two layers

Composite wafer, semiconductor device and electronic component

Vertical trench power devices with oxygen inserted Si-layers

Vertical power devices with oxygen inserted Si-layers

Transistor Device and Method for Forming a Recess for a Trench Gate Electrode

Oxygen inserted Si-layers in vertical trench power devices

Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices

Electronic circuit with a transistor device and a clamping circuit

Semiconductor device

Semiconductor package and methods of manufacturing a semiconductor package

Semiconductor module, electronic component and method of manufacturing a semiconductor module

Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture

Transistor device with a field electrode that includes two layers

Power semiconductor device having a trench with control and field electrode structures

Composite wafer, semiconductor device, electronic component and method of manufacturing a semiconductor device

Transistor device with a field electrode that includes two layers

Power semiconductor device trench having field plate and gate electrode