Inventor profile of:

Pramod Subramonium

City:

Beaverton, Oregon

Country:

United States

Published Applications:

27

Last publication date:

2023-11-16

Top Assignees for applications by Pramod Subramonium

The entities that hold a legal rights for patent applications filed by inventor Subramonium Pramod:

Recent patent applications by Subramonium Pramod

Pramod Subramonium from Beaverton, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-11-16
US20230366094A1
Chemistry; metallurgy

PECVD APPARATUS FOR IN-SITU DEPOSITION OF FILM STACKS

#2 | 2022-07-07
US20220216037A1
Electricity

Depositing a carbon hardmask by high power pulsed low frequency RF

#3 | 2019-12-12
US20190376186A1
Chemistry; metallurgy

PECVD apparatus for in-situ deposition of film stacks

#4 | 2017-05-25
US20170148628A1
Electricity

Plasma activated conformal dielectric film deposition

#5 | 2017-04-13
US20170103914A1
Electricity

Methods for formation of low-k aluminum-containing etch stop films

#6 | 2016-01-19
US13856364
Electricity

Methods of depositing smooth and conformal ashable hard mask films

#7 | 2015-12-31
US20150380296A1
Electricity

CLEANING OF CARBON-BASED CONTAMINANTS IN METAL INTERCONNECTS FOR INTERCONNECT CAPPING APPLICATIONS

#8 | 2015-08-06
US20150221542A1
Electricity

Methods and apparatus for selective deposition of cobalt in semiconductor processing

#9 | 2015-07-23
US20150206719A1
Electricity

Plasma activated conformal dielectric film deposition

#10 | 2015-04-02
US20150093908A1
Electricity

High selectivity and low stress carbon hardmask by pulsed low frequency RF power

#11 | 2015-01-15
US20150013607A1
Chemistry; metallurgy

PECVD apparatus for in-situ deposition of film stacks

#12 | 2014-08-07
US20140217193A1
Performing operations; transporting

Method and apparatus for purging and plasma suppression in a process chamber

#13 | 2014-08-07
US20140216337A1
Electricity

Plasma activated conformal dielectric film deposition

#14 | 2014-08-07
US20140216336A1
Electricity

METAL AND SILICON CONTAINING CAPPING LAYERS FOR INTERCONNECTS

#15 | 2014-02-27
US20140057454A1
Electricity

Methods and apparatus for plasma-based deposition

#16 | 2014-02-27
US20140053867A1
Performing operations; transporting

PLASMA CLEAN METHOD FOR DEPOSITION CHAMBER

#17 | 2013-12-05
US20130323930A1
Electricity

Selective Capping of Metal Interconnect Lines during Air Gap Formation

#18 | 2013-11-26
US12355601
-

Plasma clean method for deposition chamber

#19 | 2013-07-04
US20130171834A1
Electricity

In-situ deposition of film stacks

#20 | 2013-06-06
US20130143401A1
Electricity

Metal and silicon containing capping layers for interconnects

#21 | 2013-02-14
US20130040447A1
Chemistry; metallurgy

Conformal doping via plasma activated atomic layer deposition and conformal film deposition

#22 | 2013-01-10
US20130008378A1
Electricity

Apparatus including a plasma chamber and controller including instructions for forming a boron nitride layer

#23 | 2012-10-11
US20120258261A1
Electricity

INCREASING ETCH SELECTIVITY OF CARBON FILMS WITH LOWER ABSORPTION CO-EFFICIENT AND STRESS

#24 | 2012-02-02
US20120028454A1
Electricity

Plasma activated conformal dielectric film deposition

#25 | 2011-10-06
US20110244694A1
Electricity

Depositing conformal boron nitride film by CVD without plasma

#26 | 2011-09-29
US20110236594A1
Chemistry; metallurgy

In-situ deposition of film stacks

#27 | 2010-12-09
US20100308463A1
Electricity

Interfacial capping layers for interconnects

InventorID:

20288 ⎘