Inventor profile of:

XINYU FU

City:

Pleasanton, California

Country:

United States

Published Applications:

29

Last publication date:

2021-07-22

Top Assignees for applications by XINYU FU

The entities that hold a legal rights for patent applications filed by inventor FU XINYU:

Recent patent applications by FU XINYU

XINYU FU from Pleasanton, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2021-07-22
US20210225655A1
Electricity

Methods for depositing fluorine/carbon-free conformal tungsten

#2 | 2019-03-21
US20190088489A1
Electricity

Methods of depositing metal films using metal oxyhalide precursors

#3 | 2018-03-29
US20180087147A1
Chemistry; metallurgy

Process kit shield for improved particle reduction

#4 | 2018-03-08
US20180068890A1
Electricity

Method of enabling seamless cobalt gap-fill

#5 | 2017-07-06
US20170194156A1
Electricity

Methods for depositing fluorine/carbon-free conformal tungsten

#6 | 2017-05-25
US20170148670A1
Electricity

Methods for forming low-resistance contacts through integrated process flow systems

#7 | 2017-03-23
US20170084486A1
Electricity

Method of enabling seamless cobalt gap-fill

#8 | 2017-03-02
US20170062224A1
Electricity

Methods of depositing metal films using metal oxyhalide precursors

#9 | 2016-11-17
US20160336222A1
Electricity

Tungsten films by organometallic or silane pre-treatment of substrate

#10 | 2016-11-03
US20160322229A1
Electricity

Methods for selective deposition of metal silicides via atomic layer deposition cycles

#11 | 2016-09-22
US20160276214A1
Electricity

Methods for etching via atomic layer deposition (ALD) cycles

#12 | 2016-08-25
US20160247718A1
Electricity

Method of enabling seamless cobalt gap-fill

#13 | 2016-05-12
US20160133563A1
Electricity

Methods for thermally forming a selective cobalt layer

#14 | 2016-04-14
US20160104624A1
Electricity

Methods for depositing fluorine/carbon-free conformal tungsten

#15 | 2015-04-02
US20150093891A1
Electricity

Method of enabling seamless cobalt gap-fill

#16 | 2014-10-02
US20140295665A1
Electricity

Method for removing native oxide and associated residue from a substrate

#17 | 2014-09-18
US20140273515A1
Electricity

Integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices

#18 | 2014-05-01
US20140120723A1
Electricity

Methods for depositing fluorine/carbon-free conformal tungsten

#19 | 2014-01-09
US20140011354A1
Electricity

Post deposition treatments for CVD cobalt films

#20 | 2013-11-28
US20130316533A1
Electricity

Method for removing native oxide and associated residue from a substrate

#21 | 2013-10-03
US20130260555A1
Electricity

Method of enabling seamless cobalt gap-fill

#22 | 2013-07-25
US20130189840A1
Electricity

Methods for forming a contact metal layer in semiconductor devices

#23 | 2013-06-20
US20130157460A1
Electricity

Methods for annealing a contact metal layer to form a metal silicidation layer

#24 | 2013-06-04
US13480091
-

Method for removing native oxide and associated residue from a substrate

#25 | 2013-04-25
US20130102144A1
Electricity

Methods for forming a metal gate structure on a substrate

#26 | 2012-10-04
US20120252207A1
Electricity

Post deposition treatments for CVD cobalt films

#27 | 2012-03-22
US20120070982A1
Electricity

Methods for forming layers on a substrate

#28 | 2011-11-17
US20110278165A1
Chemistry; metallurgy

Process kit shield for improved particle reduction

#29 | 2010-07-01
US20100167526A1
Electricity

Method for improving electromigration lifetime of copper interconnection by extended post anneal

InventorID:

210366 ⎘