Livermore, California
United States
22
2019-11-07
The entities that hold a legal rights for patent applications filed by inventor PIPITONE JOHN:
JOHN PIPITONE from Livermore, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Physical vapor deposition with isotropic neutral and non-isotropic ion velocity distribution at the wafer surface
#2 | 2018-05-03Physical vapor deposition system with a source of isotropic ion velocity distribution at the wafer surface
#3 | 2013-01-10Physical vapor deposition chamber with capacitive tuning at wafer support
#4 | 2012-06-14Methods for depositing metal in high aspect ratio features
#5 | 2012-02-02Methods for depositing metal in high aspect ratio features
#6 | 2010-04-22Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
#7 | 2009-09-17Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface
#8 | 2009-06-25Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode
#9 | 2009-02-26Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation
#10 | 2009-02-19Method of multi-location ARC sensing with adaptive threshold comparison
#11 | 2009-02-19Apparatus for wafer level arc detection at an electrostatic chuck electrode
#12 | 2009-02-19System with multi-location arc threshold comparators and communication channels for carrying arc detection flags and threshold updating
#13 | 2006-08-31Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron
#14 | 2006-08-03Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece
#15 | 2006-08-03Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target
#16 | 2006-08-03Physical vapor deposition plasma reactor with RF source power applied to the target
#17 | 2006-08-03Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron
#18 | 2006-08-03Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
#19 | 2006-08-03Physical vapor deposition plasma reactor with VHF source power applied through the workpiece
#20 | 2006-04-06Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece
#21 | 2006-04-06Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
#22 | 2006-04-06Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
21250 ⎘