Inventor profile of:

Houssam Chouaib

City:

Milpitas, California

Country:

United States

Published Applications:

14

Last publication date:

2026-06-04

Top Assignees for applications by Houssam Chouaib

The entities that hold a legal rights for patent applications filed by inventor Chouaib Houssam:

Recent patent applications by Chouaib Houssam

Houssam Chouaib from Milpitas, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-04
US20260153448A1
Physics

Methods And Systems For Measurement Of Large Dimension Structures Fabricated Using Semiconductor Processing Techniques

#2 | 2025-12-04
US20250370352A1
Physics

Methods And Systems For Measurement Of Semiconductor Structures With Mechanical Stress Modulation

#3 | 2025-07-24
US20250237619A1
Physics

OPTICAL AND X-RAY METROLOGY METHODS FOR PATTERNED SEMICONDUCTOR STRUCTURES WITH RANDOMNESS

#4 | 2025-07-10
US20250224344A1
Physics

Measurements Of Semiconductor Structures Based On Data Collected At Prior Process Steps

#5 | 2025-05-08
US20250146961A1
Physics

OPTICAL AND X-RAY METROLOGY METHODS FOR PATTERNED SEMICONDUCTOR STRUCTURES WITH RANDOMNESS

#6 | 2025-05-08
US20250146893A1
Physics

TRANSISTOR CHANNEL STRESS AND MOBILITY METROLOGY USING MULTIPASS SPECTROSCOPIC ELLIPSOMETRY AND RAMAN JOINT MEASUREMENT

#7 | 2025-02-13
US20250053096A1
Physics

Flexible Measurement Models For Model Based Measurements Of Semiconductor Structures

#8 | 2025-01-09
US20250012734A1
Physics

Multiple Pass Optical Measurements Of Semiconductor Structures

#9 | 2024-05-09
US20240151770A1
Physics

Methods And Systems For Measurement Of Semiconductor Structures Based On Derivative Measurement Signals

#10 | 2021-09-23
US20210293532A1
Physics

Scatterometry based methods and systems for measurement of strain in semiconductor structures

#11 | 2020-06-25
US20200200525A1
Physics

Scatterometry based methods and systems for measurement of strain in semiconductor structures

#12 | 2019-09-19
US20190286787A1
Physics

Measurement models of nanowire semiconductor structures based on re-useable sub-structures

#13 | 2019-06-13
US20190178788A1
Physics

Measurement methodology of advanced nanostructures

#14 | 2018-03-01
US20180059019A1
Physics

Model based optical measurements of semiconductor structures with anisotropic dielectric permittivity

InventorID:

2128845 ⎘