Inventor profile of:

Robert Kraft

City:

Plano, Texas

Country:

United States

Published Applications:

28

Last publication date:

2024-04-18

Top Assignees for applications by Robert Kraft

The entities that hold a legal rights for patent applications filed by inventor Kraft Robert:

Recent patent applications by Kraft Robert

Robert Kraft from Plano, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-04-18
US20240124968A1
Chemistry; metallurgy

PIEZOELECTRIC BULK LAYERS WITH TILTED C-AXIS ORIENTATION AND METHODS FOR MAKING THE SAME

#2 | 2022-10-13
US20220325403A1
Chemistry; metallurgy

Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same

#3 | 2022-08-25
US20220271726A1
Electricity

PIEZOELECTRIC BULK LAYERS WITH TILTED C-AXIS ORIENTATION AND METHODS FOR MAKING THE SAME

#4 | 2021-03-18
US20210079515A1
Chemistry; metallurgy

Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same

#5 | 2019-09-26
US20190296710A1
Electricity

Method for manufacturing piezoelectric bulk layers with tilted c-axis orientation

#6 | 2019-09-26
US20190296707A1
Electricity

Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same

#7 | 2018-04-19
US20180109237A1
Electricity

Wafer-level-packaged BAW devices with surface mount connection structures

#8 | 2009-08-06
US20090194801A1
Electricity

Ferroelectric capacitor manufacturing process

#9 | 2009-01-15
US20090017588A1
Electricity

Systems and methods that selectively modify liner induced stress

#10 | 2008-11-20
US20080283975A1
Electricity

Formation of a silicon oxide interface layer during silicon carbide etch stop deposition to promote better dielectric stack adhesion

#11 | 2008-01-17
US20080014739A1
Electricity

Silicon nitride/oxygen doped silicon carbide etch stop bi-layer for improved interconnect reliability

#12 | 2007-12-27
US20070298521A1
Electricity

Method for cleaning post-etch noble metal residues

#13 | 2007-12-20
US20070290347A1
Electricity

SEMICONDUCTIVE DEVICE HAVING RESIST POISON ALUMINUM OXIDE BARRIER AND METHOD OF MANUFACTURE

#14 | 2007-05-10
US20070105368A1
Electricity

Method of fabricating a microelectronic device using electron beam treatment to induce stress

#15 | 2007-02-22
US20070042599A1
Electricity

Methods to facilitate etch uniformity and selectivity

#16 | 2007-02-08
US20070032094A1
Electricity

Energy beam treatment to improve packaging reliability

#17 | 2006-11-23
US20060264042A1
Electricity

Interconnect structure including a silicon oxycarbonitride layer

#18 | 2006-11-23
US20060264028A1
Electricity

Energy beam treatment to improve the hermeticity of a hermetic layer

#19 | 2006-10-10
US10304943
-

Via formation for damascene metal conductors in an integrated circuit

#20 | 2006-08-08
US10438566
-

Method of passivating and/or removing contaminants on a low-k dielectric/copper surface

#21 | 2006-08-03
US20060172481A1
Electricity

Systems and methods that selectively modify liner induced stress

#22 | 2006-06-08
US20060121739A1
Electricity

Method for reducing line edge roughness for conductive features

#23 | 2006-03-02
US20060046498A1
Electricity

Method for patterning sub-lithographic features in semiconductor manufacturing

#24 | 2006-01-10
US10789338
-

Dual damascene pattern liner

#25 | 2005-11-17
US20050255687A1
Electricity

Plasma treatment for silicon-based dielectrics

#26 | 2005-11-03
US20050245074A1
Electricity

In-situ etch-stop etch and ashing in association with damascene processing in forming semiconductor interconnect structures

#27 | 2005-05-31
US10393317
-

BARC etch comprising a selective etch chemistry and a high polymerizing gas for CD control

#28 | 2005-03-29
US9599718
-

Process flow for dual damescene interconnect structures

InventorID:

2168790 ⎘