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Inventor profile of:

Paul Bridger

City:

Altadena, California

Country:

United States

Published Applications:

26

Last publication date:

2016-01-28

Top Assignees for applications by Paul Bridger

The entities that hold a legal rights for patent applications filed by inventor Bridger Paul:

Recent patent applications by Bridger Paul

Paul Bridger from Altadena, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2016-01-28
US20160027643A1
Electricity

Fabrication of semiconductor device using alternating high and low temperature layers

 #2 | 2015-12-10
US20150357182A1
Electricity

Fabrication of III-Nitride Power Semiconductor Device

 #3 | 2015-02-05
US20150037965A1
Electricity

Fabrication of III-nitride semiconductor device and related structures

 #4 | 2014-04-17
US20140106548A1
Electricity

Fabrication of III-nitride semiconductor device and related structures

 #5 | 2014-02-06
US20140034959A1
Electricity

III-nitride semiconductor device with stepped gate

 #6 | 2013-10-10
US20130264579A1
Electricity

III-nitride heterojunction device

 #7 | 2013-10-03
US20130256695A1
Electricity

III-nitride heterojunction device

 #8 | 2013-05-02
US20130105814A1
Electricity

Active area shaping for III-nitride devices

 #9 | 2011-06-16
US20110143517A1
Electricity

III-nitride monolithic IC

 #10 | 2008-11-06
US20080274621A1
Electricity

III-nitride semiconductor device with trench structure

 #11 | 2007-12-20
US20070293015A1
Electricity

III-nitride device and method with variable epitaxial growth direction

 #12 | 2007-08-02
US20070176201A1
Electricity

Integrated III-nitride devices

 #13 | 2007-04-26
US20070090373A1
Electricity

III-nitride device with improved layout geometry

 #14 | 2007-04-05
US20070077714A1
Electricity

Method for fabricating a semiconductor device

 #15 | 2007-04-05
US20070077689A1
Electricity

Complimentary lateral III-nitride transistors

 #16 | 2007-03-15
US20070056506A1
Electricity

Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path

 #17 | 2006-12-14
US20060281279A1
Electricity

Structure and method for III-nitride monolithic power IC

 #18 | 2006-10-05
US20060223275A1
Electricity

Structure and method for III-nitride device isolation

 #19 | 2006-04-20
US20060081985A1
Electricity

III-nitride power semiconductor device with a current sense electrode

 #20 | 2005-09-01
US20050191821A1
Electricity

III-nitride device and method with variable epitaxial growth direction

 #21 | 2005-08-18
US20050180231A1
Electricity

Complimentary lateral nitride transistors

 #22 | 2005-08-18
US20050179096A1
Electricity

Complimentary nitride transistors vertical and common drain

 #23 | 2005-07-07
US20050145883A1
Electricity

III-nitride semiconductor device with trench structure

 #24 | 2005-06-30
US20050142810A1
Electricity

Void isolated III-nitride device

 #25 | 2005-06-30
US20050139891A1
Electricity

III-nitride device with improved layout geometry

 #26 | 2005-06-09
US20050121729A1
Electricity

Structure and method for III-nitride monolithic power IC
InventorID:

217438 ⎘