EI Segundo, California
United States
16
2014-11-20
14
2015-12-01
These are the the leading inventors for applications assigned to International Rectifier Corporation:
International Rectifier Corporation based in EI Segundo, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
#2 | 2014-11-20 ✅ Patent 9,299,793 granted on 2016-03-29Semiconductor device with a field plate trench having a thick bottom dielectric
#3 | 2014-07-10 ✅ Patent 9,461,463 granted on 2016-10-04DC/DC converter with III-nitride switches
#4 | 2014-06-19 ✅ Patent 9,608,542 granted on 2017-03-28III-nitride power conversion circuit
#5 | 2014-05-08 ✅ Patent 9,711,437 granted on 2017-07-18Semiconductor package having multi-phase power inverter with internal temperature sensor
#6 | 2014-05-01 ✅ Patent 9,449,957 granted on 2016-09-20Control and driver circuits on a power quad flat no-lead (PQFN) leadframe
#7 | 2014-04-17 ✅ Patent 8,865,575 granted on 2014-10-21Fabrication of III-nitride semiconductor device and related structures
#8 | 2014-02-20 ✅ Patent 8,836,112 granted on 2014-09-16Semiconductor package for high power devices
#9 | 2014-01-30Enhancement Mode III-Nitride Device
#10 | 2013-12-19Monolithic Group III-V and Group IV Device
#11 | 2013-10-10 ✅ Patent 9,627,966 granted on 2017-04-18Power converter having an advanced control IC
#12 | 2013-10-03 ✅ Patent 9,299,819 granted on 2016-03-29Deep gate trench IGBT
#13 | 2013-09-26 ✅ Patent 8,680,661 granted on 2014-03-25Direct contact package for power transistors
#14 | 2013-06-06 ✅ Patent 9,118,126 granted on 2015-08-25Power semiconductor package with conductive clip
#15 | 2013-05-09 ✅ Patent 8,592,862 granted on 2013-11-26Gallium nitride semiconductor structures with compositionally-graded transition layer
#16 | 2013-05-02 ✅ Patent 8,536,624 granted on 2013-09-17Active area shaping for III-nitride devices
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