Inventor profile of:

Pinghai Hao

City:

Plano, Texas

Country:

United States

Published Applications:

51

Last publication date:

2026-05-28

Top Assignees for applications by Pinghai Hao

The entities that hold a legal rights for patent applications filed by inventor Hao Pinghai:

Recent patent applications by Hao Pinghai

Pinghai Hao from Plano, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-05-28
US20260150332A1
Electricity

SEMICONDUCTOR DEVICES WITH FIELD PLATE SPACER OVER STI

#2 | 2025-02-20
US20250063755A1
Electricity

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

#3 | 2024-10-31
US20240363748A1
Electricity

SEMICONDUCTOR DEVICES WITH SELECTIVELY DOPED GATE ELECTRODE STRUCTURE

#4 | 2023-11-16
US20230369482A1
Electricity

Gallium nitride transistor with a doped region

#5 | 2021-05-27
US20210159329A1
Electricity

Gallium nitride transistor with a doped region

#6 | 2020-06-11
US20200185499A1
Electricity

Transistor with multiple GaN-based alloy layers

#7 | 2020-05-21
US20200161461A1
Electricity

Gallium nitride transistor with a doped region

#8 | 2020-02-27
US20200064394A1
Physics

HEMT wafer probe current collapse screening

#9 | 2019-05-23
US20190157091A1
Electricity

Recessed solid state apparatuses

#10 | 2018-11-20
US15820168
Electricity

Recessed solid state apparatuses

#11 | 2017-10-19
US20170301673A1
Electricity

High voltage CMOS with triple gate oxide

#12 | 2016-11-03
US20160322263A1
Electricity

Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure

#13 | 2016-07-07
US20160197135A1
Electricity

Single photomask high precision thin film resistor

#14 | 2015-11-12
US20150325578A1
Electricity

Low cost transistors

#15 | 2015-11-12
US20150325577A1
Electricity

High voltage CMOS with triple gate oxide

#16 | 2015-09-03
US20150249088A1
Electricity

Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure

#17 | 2015-09-03
US20150249040A1
Electricity

Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure

#18 | 2014-09-11
US20140252485A1
Electricity

Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure

#19 | 2014-07-03
US20140184381A1
Electricity

Single photomask high precision thin film resistor

#20 | 2014-07-03
US20140183631A1
Electricity

Low cost transistors

#21 | 2014-07-03
US20140183630A1
Electricity

DEMOS formed with a through gate implant

#22 | 2014-03-06
US20140062524A1
Electricity

JFET having width defined by trench isolation

#23 | 2013-06-20
US20130157429A1
Electricity

High voltage transistor using diluted drain

#24 | 2013-05-02
US20130105909A1
Electricity

High voltage CMOS with triple gate oxide

#25 | 2012-03-29
US20120074458A1
Electricity

Quasi-vertical gated NPN-PNP ESD protection device

#26 | 2011-12-22
US20110309440A1
Electricity

High voltage transistor using diluted drain

#27 | 2010-10-21
US20100264466A1
Electricity

GATE SELF-ALIGNED LOW NOISE JFET

#28 | 2010-07-08
US20100171149A1
Electricity

Symmetrical bi-directional semiconductor ESD protection device

#29 | 2010-06-24
US20100155789A1
Electricity

Low noise JFET

#30 | 2010-02-11
US20100032769A1
Electricity

Implanted well breakdown in high voltage devices

#31 | 2010-02-11
US20100032744A1
Electricity

Reduced area single poly EEPROM

#32 | 2010-02-11
US20100032729A1
Electricity

Integration of high voltage JFET in linear bipolar CMOS process

#33 | 2010-02-11
US20100032728A1
Electricity

Area efficient 3D integration of low noise JFET and MOS in linear bipolar CMOS process

#34 | 2009-07-02
US20090166721A1
Electricity

Quasi-vertical gated NPN-PNP ESD protection device

#35 | 2008-10-16
US20080251818A1
Electricity

Low noise JFET

#36 | 2008-09-11
US20080217664A1
Electricity

Gate self aligned low noise JFET

#37 | 2007-09-20
US20070218663A1
Electricity

Semiconductor device incorporating fluorine into gate dielectric

#38 | 2007-07-17
US10442524
-

Fabrication of an OTP-EPROM having reduced leakage current

#39 | 2007-06-26
US10378402
-

Drain extended MOS devices with self-aligned floating region and fabrication methods therefor

#40 | 2007-04-12
US20070080400A1
Electricity

Low noise vertical variable gate control voltage JFET device in a BiCMOS process and methods to build this device

#41 | 2006-12-21
US20060286741A1
Electricity

Methods of fabricating high voltage devices

#42 | 2006-05-16
US10387164
-

Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture therefor

#43 | 2005-09-29
US20050215018A1
Electricity

Reduction of channel hot carrier effects in transistor devices

#44 | 2005-09-08
US20050194631A1
Electricity

EEPROM with etched tunneling window

#45 | 2005-07-14
US20050151171A1
Electricity

JFET structure for integrated circuit and fabrication method

#46 | 2005-06-23
US20050136579A1
Electricity

Method for manufacturing a MOS transistor having reduced 1/f noise

#47 | 2005-04-26
US10772210
-

Threshold voltage stabilizer, method of manufacturing and integrated circuit employing the same

#48 | 2005-03-31
US20050067631A1
Electricity

Integrated circuit device with a vertical JFET

#49 | 2005-03-24
US20050064671A1
Electricity

Reduction of channel hot carrier effects in transistor devices

#50 | 2005-03-24
US20050064670A1
Electricity

Depletion drain-extended MOS transistors and methods for making the same

#51 | 2005-03-01
US10434642
-

JFET structure for integrated circuit and fabrication method

InventorID:

217607 ⎘