Augsburg
Germany
112
2020-01-23
The entities that hold a legal rights for patent applications filed by inventor Willmeroth Armin:
Armin Willmeroth from Augsburg, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Power semiconductor device having vertically parallel p-n layers formed in an active region under transistor cells and under a non-depletable extension zone formed in the edge region
#2 | 2017-03-02Semiconductor device
#3 | 2016-12-22Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
#4 | 2016-09-15Super junction semiconductor device having columnar super junction regions extending into a drift layer
#5 | 2016-07-28Super junction semiconductor device with field extension zones
#6 | 2016-06-30Semiconductor device having switchable regions with different transconductances
#7 | 2016-04-14Method of forming a super junction semiconductor device having stripe-shaped regions of the opposite conductivity types
#8 | 2015-12-31Charge compensation structure and manufacturing therefor
#9 | 2015-12-24Semiconductor switching devices with different local transconductance
#10 | 2015-11-19VDMOS having a drift zone with a compensation structure
#11 | 2015-11-12Super junction semiconductor device having strip structures in a cell area
#12 | 2015-08-27Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
#13 | 2015-07-30Super junction semiconductor device having a compensation structure
#14 | 2015-05-28Super junction semiconductor device having columnar super junction regions
#15 | 2015-04-30Semiconductor device and integrated apparatus comprising the same
#16 | 2015-04-30Semiconductor device
#17 | 2015-04-09Half-bridge circuit including a low-side transistor and a level shifter transistor integrated in a common semiconductor body
#18 | 2015-03-26Charge-compensation semiconductor device
#19 | 2015-02-26Method of manufacturing a super junction semiconductor device with overcompensation zones
#20 | 2015-02-12Semiconductor arrangement with active drift zone
#21 | 2015-01-08Semiconductor component
#22 | 2014-11-13Trench transistor having a doped semiconductor region
#23 | 2014-11-06Semiconductor Device with a Super Junction Structure with Compensation Layers and a Dielectric Layer
#24 | 2014-11-06Super junction structure semiconductor device based on a compensation structure including compensation layers and a fill structure
#25 | 2014-11-06Semiconductor device with a super junction structure based on a compensation structure with compensation layers and having a compensation rate gradient
#26 | 2014-11-06Semiconductor device with a super junction structure with one, two or more pairs of compensation layers
#27 | 2014-10-30Radiation conversion device and method of manufacturing a radiation conversion device
#28 | 2014-08-21Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device
#29 | 2014-08-21Super Junction Semiconductor Device with an Edge Area Having a Reverse Blocking Capability
#30 | 2014-08-21Super junction semiconductor device with a nominal breakdown voltage in a cell area
#31 | 2014-08-21Manufacturing a super junction semiconductor device
#32 | 2014-08-21Super junction semiconductor device comprising implanted zones
#33 | 2014-08-21Super junction semiconductor device with overcompensation zones
#34 | 2014-08-21Semiconductor device with a super junction structure having a vertical impurity distribution
#35 | 2014-05-01Super junction semiconductor device comprising a cell area and an edge area
#36 | 2014-03-13Method for fabricating a trench structure, and a semiconductor arrangement comprising a trench structure
#37 | 2014-03-13Semiconductor arrangement with a load, a sense and a start-up transistor
#38 | 2014-03-06Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
#39 | 2014-01-02DRIVING CIRCUIT FOR A TRANSISTOR
#40 | 2014-01-02Semiconductor component with a drift region and a drift control region
#41 | 2013-12-12SEMICONDUCTOR COMPONENT WITH VERTICAL STRUCTURES HAVING A HIGH ASPECT RATIO AND METHOD
#42 | 2013-12-05Integrated circuit having lateral compensation component
#43 | 2013-09-26Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor body
#44 | 2013-08-29Lateral trench transistor, as well as a method for its production
#45 | 2013-08-01Semiconductor arrangement with active drift zone
#46 | 2013-05-09Semiconductor component
#47 | 2013-01-10Semiconductor device with a dynamic gate-drain capacitance
#48 | 2012-12-06Transistor with controllable compensation regions
#49 | 2012-12-06Transistor with controllable compensation regions
#50 | 2012-07-12Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices
#51 | 2012-05-31Semiconductor component with high breakthrough tension and low forward resistance
#52 | 2012-04-12Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production
#53 | 2012-02-09Integrated circuit having vertical compensation component
#54 | 2012-01-26Semiconductor device with drift regions and compensation regions
#55 | 2011-12-22Electronic circuit and semiconductor arrangement with a load, a sense and a start-up transistor
#56 | 2011-10-06Semiconductor with a dynamic gate-drain capacitance
#57 | 2011-10-06Integrated circuit device and method for its production
#58 | 2011-08-04Method for producing a semiconductor device with a semiconductor body
#59 | 2011-06-09Power semiconductor component with plate capacitor structure and edge termination
#60 | 2011-05-19Power semiconductor component with plate capacitor structure having an edge plate electrically connected to source or drain potential
#61 | 2011-04-21MOS transistor with elevated gate drain capacity
#62 | 2010-08-26Component arrangement including a MOS transistor having a field electrode
#63 | 2010-07-22Semiconductor device and method for manufacturing
#64 | 2010-04-01Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device
#65 | 2010-04-01Semiconductor component with a drift zone and a drift control zone
#66 | 2010-04-01MOS transistor having an increased gate-drain capacitance
#67 | 2010-04-01Semiconductor component having a drift zone and a drift control zone
#68 | 2010-02-25Semiconductor device with a charge carrier compensation structure and process
#69 | 2010-02-04Semiconductor device with a dynamic gate-drain capacitance
#70 | 2009-12-31SEMICONDUCTOR COMPONENT WITH TWO-STAGE BODY ZONE
#71 | 2009-12-31Semiconductor component including a drift zone and a drift control zone
#72 | 2009-11-03Radiation detector and method
#73 | 2009-10-29Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production
#74 | 2009-09-24SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR ITS PRODUCTION
#75 | 2009-09-10Semiconductor device having additional capacitance to inherent gate-drain or inherent drain-source capacitance
#76 | 2009-09-03Semiconductor component with a drift region and a drift control region
#77 | 2009-07-30SEMICONDUCTOR DEVICE WITH AT LEAST ONE FIELD PLATE
#78 | 2009-07-23SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
#79 | 2009-07-02POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER
#80 | 2009-07-02Power semiconductor having a lightly doped drift and buffer layer
#81 | 2009-06-25INTEGRATED CIRCUIT DEVICE AND METHOD FOR ITS PRODUCTION
#82 | 2009-05-21Power semiconductor component with charge compensation structure and method for the fabrication thereof
#83 | 2009-04-02Heterojunction semiconductor device and method
#84 | 2008-10-30Component arrangement including a power semiconductor component having a drift control zone
#85 | 2008-10-30Semiconductor component and method for producing it
#86 | 2008-10-09SEMICONDUCTOR COMPONENT INCLUDING A MONOCRYSTALLINE SEMICONDUCTOR BODY AND METHOD
#87 | 2008-10-02Semiconductor component and method for producing it
#88 | 2008-08-28Lateral compensation component
#89 | 2008-08-21Semiconductor component with vertical structures having a high aspect ratio and method
#90 | 2008-08-21Semiconductor component comprising a drift zone and a drift control zone
#91 | 2008-07-31Lateral semiconductor component with a drift zone having at least one field electrode
#92 | 2008-07-31COMPONENT ARRANGEMENT INCLUDING A MOS TRANSISTOR HAVING A FIELD ELECTRODE
#93 | 2008-06-26Integrated circuit including a charge compensation component
#94 | 2008-06-12Semiconductor component
#95 | 2008-03-20METHOD FOR FABRICATING A TRENCH STRUCTURE, AND A SEMICONDUCTOR ARRANGEMENT COMPRISING A TRENCH STRUCTURE
#96 | 2007-08-02Integrated circuit having compensation component
#97 | 2007-05-17Method for fabricating a semiconductor component
#98 | 2007-05-17Power semiconductor component with charge compensation structure and method for the fabrication thereof
#99 | 2007-02-01Power semiconductor component with a low on-state resistance
#100 | 2006-11-23Lateral MISFET and method for fabricating it
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