Munich
Germany
44
2024-06-13
The entities that hold a legal rights for patent applications filed by inventor Leendertz Caspar:
Caspar Leendertz from Munich, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Semiconductor Device Having a Field Termination Structure and a Charge Balance Structure, and Method of Producing the Semiconductor Device
#2 | 2024-04-25Silicon carbide device with a stripe-shaped trench gate structure
#3 | 2023-06-22Semiconductor device having a transistor with trenches and mesas
#4 | 2023-05-25Shielding Structure for Silicon Carbide Devices
#5 | 2023-05-11Semiconductor Component Having A SiC Semiconductor Body
#6 | 2023-03-30Semiconductor device including current spread region
#7 | 2023-03-30Method of producing a silicon carbide device with a trench gate
#8 | 2023-03-16Semiconductor device fabricated using channeling implant
#9 | 2022-06-23SiC devices with shielding structure
#10 | 2022-06-23Shielding structure for SiC devices
#11 | 2022-05-12Semiconductor device including trench structure and manufacturing method
#12 | 2022-02-24Power transistor with integrated Schottky diode
#13 | 2022-01-27Method of manufacturing silicon carbide semiconductor devices
#14 | 2021-11-04Silicon carbide field-effect transistor including shielding areas
#15 | 2021-10-07Power semiconductor switch having a cross-trench structure
#16 | 2021-07-22Semiconductor component having a SiC semiconductor body
#17 | 2021-06-24Ion beam implantation method and semiconductor device
#18 | 2021-05-27Failure structure in semiconductor device
#19 | 2021-05-06Semiconductor device including a transistor with one or more barrier regions
#20 | 2021-04-22SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof
#21 | 2021-04-08Silicon carbide device with an implantation tail compensation region
#22 | 2021-03-25Semiconductor device including current spread region
#23 | 2021-02-18Silicon carbide device with trench gate
#24 | 2021-02-11IGBT with dV/dt controllability
#25 | 2021-01-14Silicon carbide device with compensation layer and method of manufacturing
#26 | 2020-12-03Silicon carbide device with compensation region and method of manufacturing
#27 | 2020-09-10Semiconductor device including trench structure and manufacturing method
#28 | 2020-07-09Silicon carbide device with Schottky contact
#29 | 2020-06-18SiC device and methods of manufacturing thereof
#30 | 2020-06-04Semiconductor device including trench structures and manufacturing method
#31 | 2020-05-28Power semiconductor switch with improved controllability
#32 | 2020-05-21SiC power semiconductor device with integrated body diode
#33 | 2020-05-21SiC power semiconductor device with integrated Schottky junction
#34 | 2020-05-14Method of manufacturing silicon carbide semiconductor devices
#35 | 2020-04-09Semiconductor component having a SiC semiconductor body and method for producing a semiconductor component
#36 | 2020-03-10SiC trench transistor device and methods of manufacturing thereof
#37 | 2020-02-27Semiconductor device including junction material in a trench and manufacturing method
#38 | 2019-11-07Silicon carbide field-effect transistor including shielding areas
#39 | 2019-09-05Power semiconductor device having a cross-trench arrangement
#40 | 2019-07-11Power semiconductor device with dV/dt controllability
#41 | 2019-06-20Semiconductor device comprising a barrier region
#42 | 2019-04-25IGBT with dV/dt controllability
#43 | 2018-11-29Power semiconductor device with dV/dt controllability and cross-trench arrangement
#44 | 2018-09-27Silicon carbide semiconductor device and method of manufacturing
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