🔗 Permalink

Inventor profile of:

Yutaro Aoki

City:

Tokyo

Country:

Japan

Published Applications:

Last publication date:

2024-01-25

Top Assignees for applications by Yutaro Aoki

The entities that hold a legal rights for patent applications filed by inventor Aoki Yutaro:

ADEKA CORPORATION 8 Tokyo, Japan
SAMSUNG ELECTRONICS CO., LTD. 5 Suwon-si, South Korea
FUJIKOKI CORPORATION 2 Tokyo, Japan
SAMSUNG ELECTRONICS CO., LTD. 1 Gyeonggi-Do, South Korea

Recent patent applications by Aoki Yutaro

Yutaro Aoki from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-01-25

US20240030037A1

Electricity

ETCHING METHOD

#2 | 2023-01-12

US20230012455A1

Mechanical engineering

POWER ELEMENT AND EXPANSION VALVE USING SAME

#3 | 2022-12-29

US20220412617A1

Mechanical engineering

Power element and expansion valve using same

#4 | 2022-12-29

US20220412616A1

Mechanical engineering

Power element and expansion valve using same

#5 | 2022-12-15

US20220396590A1

Chemistry; metallurgy

Compound, thin-film forming raw material, and method of producing thin-film

#6 | 2022-10-13

US20220324887A1

Chemistry; metallurgy

ORGANOMETALLIC ADDUCT COMPOUND AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE BY USING THE SAME

#7 | 2021-12-16

US20210388010A1

Chemistry; metallurgy

ORGANOMETALLIC COMPOUND AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING THE SAME

#8 | 2021-12-09

US20210380622A1

Chemistry; metallurgy

MATERIALS FOR FABRICATING THIN FILMS, METHODS OF FABRICATING THIN FILMS USING THE SAME, AND EQUIPMENT FOR FABRICATING THIN FILMS USING THE SAME

#9 | 2021-09-16

US20210284667A1

Chemistry; metallurgy

ORGANOMETALLIC ADDUCT COMPOUND AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING THE SAME

#10 | 2021-02-11

US20210040130A1

Chemistry; metallurgy

Niobium compound and method of forming thin film

#11 | 2020-07-09

US20200216479A1

Chemistry; metallurgy

Tungsten compound, raw material for thin film formation and method for producing thin film

#12 | 2018-12-20

US20180363131A1

Chemistry; metallurgy

Tungsten precursor and method of forming Tungsten containing layer using the same

InventorID:

2377875 ⎘