Inventor profile of:

SanDisk 3D LLC

City:

Milpitas, California

Country:

United States

Published Applications:

15

Last publication date:

2013-07-18

Top Assignees for applications by SanDisk 3D LLC

The entities that hold a legal rights for patent applications filed by inventor SanDisk 3D LLC:

Recent patent applications by SanDisk 3D LLC

SanDisk 3D LLC from Milpitas, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-07-18
US20130183829A1
Electricity

Methods for increased array feature density

#2 | 2013-07-18
US20130181181A1
Electricity

MIIIM DIODE HAVING LANTHANUM OXIDE

#3 | 2013-07-11
US20130175675A1
Electricity

Method of fabricating a self-aligning damascene memory structure

#4 | 2013-07-11
US20130175492A1
Electricity

Memory cells having storage elements that share material layers with steering elements and methods of forming the same

#5 | 2013-07-04
US20130170283A1
Physics

Low forming voltage non-volatile storage device

#6 | 2013-06-27
US20130164921A1
Electricity

Methods of making a high-density nonvolatile memory

#7 | 2013-06-13
US20130148421A1
Physics

Methods of programming two terminal memory cells

#8 | 2013-06-13
US20130146832A1
Electricity

Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same

#9 | 2013-05-30
US20130135925A1
Physics

Structure and method for biasing phase change memory array for reliable writing

#10 | 2013-05-23
US20130130467A1
Electricity

Resist feature and removable spacer pitch doubling patterning method for pillar structures

#11 | 2013-05-23
US20130126821A1
Electricity

BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERS

#12 | 2013-05-16
US20130121078A1
Physics

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture

#13 | 2013-05-16
US20130121061A1
Physics

Nonvolatile memory cell comprising a diode and a resistance-switching material

#14 | 2013-05-16
US20130119510A1
Electricity

Devices including a P-I-N diode disposed adjacent a silicide in series with a dielectric material

#15 | 2013-05-16
US20130119338A1
Electricity

Resistance-switching memory cells adapted for use at low voltage

InventorID:

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