Miyagi
Japan
42
2026-01-22
The entities that hold a legal rights for patent applications filed by inventor Endoh Tetsuo:
Tetsuo Endoh from Miyagi, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
NEURAL NETWORK DEVICE AND OPERATION CONDITION DETERMINATION METHOD
#2 | 2024-08-22TUNNEL JUNCTION LAMINATED FILM, MAGNETIC MEMORY ELEMENT, AND MAGNETIC MEMORY
#3 | 2024-06-13COMPUTATION PROCESSING DEVICE
#4 | 2024-06-06SEMICONDUCTOR CIRCUIT DEVICE
#5 | 2024-04-18COMPUTATION PROCESSING DEVICE
#6 | 2023-09-14Magnetoresistance effect element and magnetic memory
#7 | 2023-08-03SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER
#8 | 2023-05-18Semiconductor memory device and control device for semiconductor memory device
#9 | 2023-01-19DRIVING METHOD OF SYNAPSE CIRCUIT
#10 | 2022-06-23Neural network circuit device
#11 | 2022-06-16Electric power converting device, and electricity generating system
#12 | 2022-04-14Magnetic laminated film, magnetic memory element, and magnetic memory
#13 | 2022-03-10Nonvolatile logic circuit
#14 | 2022-03-03Clustering device and clustering method
#15 | 2022-02-24Memory circuit device including a selection circuit unit shared by a write circuit unit and a read circuit unit
#16 | 2022-02-17MAGNETIC FILM, MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
#17 | 2021-07-29Magnetoresistance effect element, magnetic memory array, magnetic memory device, and write method for magnetoresistance effect element
#18 | 2021-06-24Lookup table circuit comprising a programmable logic device having a selection circuit connected to a memory cell array and separated from a path of a read circuit
#19 | 2021-05-27Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device
#20 | 2021-04-29Magnetic memory device with write current flowing simultaneously through non-adjacent lines in memory cell array
#21 | 2021-04-22Magnetoresistance effect element, circuit device, and circuit unit
#22 | 2021-04-15Integrated circuit device
#23 | 2021-04-01Magnetoresistive element and magnetic memory
#24 | 2021-03-25Magnetic memory element, method for producing same, and magnetic memory
#25 | 2021-02-25Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory
#26 | 2021-01-07Magnetoresistance effect element and magnetic memory
#27 | 2020-08-27Method for calculating clustering evaluation value, and method for determining number of clusters
#28 | 2020-08-20Memory circuit device including a selection circuit unit shared by a write circuit unit and a read circut unit
#29 | 2020-07-09Memory device
#30 | 2020-05-28Memory device that enables direct block copying between cell configurations in different operation modes
#31 | 2020-03-12Data write circuit of resistive memory element
#32 | 2019-12-05Bias circuit and amplification apparatus
#33 | 2019-12-05Reading device and logic device
#34 | 2019-10-31Switching circuit device, step-down DC-DC converter, and element unit
#35 | 2019-10-03Evaluation method and evaluation apparatus for electronic device
#36 | 2019-07-18Memory device and memory system
#37 | 2019-06-27Method for producing magnetic memory comprising magnetic tunnel junction element
#38 | 2019-04-18Semiconductor device
#39 | 2015-07-09Semiconductor integrated circuit and method of producing the same
#40 | 2015-05-21Nonvolatile logic gate device
#41 | 2013-05-16Semiconductor integrated circuit and method of producing the same
#42 | 2010-11-11MOS semiconductor memory device having charge storage region formed from stack of insulating films
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