Inventor profile of:

ROBERT BRUCE

City:

White Plains, New York

Country:

United States

Published Applications:

14

Last publication date:

2022-11-03

Top Assignees for applications by ROBERT BRUCE

The entities that hold a legal rights for patent applications filed by inventor BRUCE ROBERT:

Recent patent applications by BRUCE ROBERT

ROBERT BRUCE from White Plains, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2022-11-03
US20220347681A1
Performing operations; transporting

MICROFLUIDIC CHIPS WITH ONE OR MORE VIAS FILLED WITH SACRIFICIAL PLUGS

#2 | 2020-09-01
US16380618
Electricity

Stackable cross-point phase-change material memory array with a resistive liner

#3 | 2020-07-02
US20200212383A1
Electricity

Through silicon via energy storage devices

#4 | 2020-04-23
US20200122139A1
Performing operations; transporting

Microfluidic chips with one or more vias filled with sacrificial plugs

#5 | 2020-03-26
US20200098986A1
Electricity

Method for manufacturing phase change memory

#6 | 2020-02-27
US20200066977A1
Electricity

Phase change memory with a dielectric bi-layer

#7 | 2019-11-14
US20190345607A1
Chemistry; metallurgy

Composition control of chemical vapor deposition nitrogen doped germanium antimony tellurium

#8 | 2019-05-16
US20190148453A1
Electricity

ACCESS DEVICE AND PHASE CHANGE MEMORY COMBINATION STRUCTURE IN BACKEND OF LINE (BEOL)

#9 | 2019-05-09
US20190140171A1
Electricity

Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication

#10 | 2019-05-02
US20190131525A1
Electricity

Confined lateral switching cell for high density scaling

#11 | 2019-04-25
US20190123101A1
Electricity

Access device and phase change memory combination structure in backend of line (BEOL)

#12 | 2019-04-25
US20190123100A1
Electricity

ACCESS DEVICE AND PHASE CHANGE MEMORY COMBINATION STRUCTURE IN BACKEND OF LINE (BEOL)

#13 | 2019-04-18
US20190115392A1
Electricity

ACCESS DEVICE AND PHASE CHANGE MEMORY COMBINATION STRUCTURE IN BACKEND OF LINE (BEOL)

#14 | 2018-11-27
US15803349
Electricity

Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication

InventorID:

2483120 ⎘