Inventor profile of:

Mark Doczy

City:

Beaverton, Oregon

Country:

United States

Published Applications:

44

Last publication date:

2021-01-14

Top Assignees for applications by Mark Doczy

The entities that hold a legal rights for patent applications filed by inventor Doczy Mark:

Recent patent applications by Doczy Mark

Mark Doczy from Beaverton, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2021-01-14
US20210013397A1
Electricity

Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the same

#2 | 2020-01-02
US20200006628A1
Electricity

Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion

#3 | 2020-01-02
US20200005861A1
Physics

Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains

#4 | 2019-10-24
US20190326353A1
Electricity

Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication

#5 | 2019-10-03
US20190304653A1
Electricity

Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication

#6 | 2019-10-03
US20190304524A1
Physics

SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED STABILITY AND THEIR METHODS OF FABRICATION

#7 | 2019-10-03
US20190304523A1
Physics

Self-aligned spin orbit torque (SOT) memory devices and their methods of fabrication

#8 | 2019-06-20
US20190189913A1
Electricity

Spin transfer torque memory devices having heusler magnetic tunnel junctions

#9 | 2011-04-28
US20110097858A1
Electricity

Transition metal alloys for use as a gate electrode and devices incorporating these alloys

#10 | 2010-06-10
US20100140717A1
Electricity

Tunable gate electrode work function material for transistor applications

#11 | 2009-06-11
US20090149012A1
Electricity

METHOD OF FORMING A NONPLANAR TRANSISTOR WITH SIDEWALL SPACERS

#12 | 2009-01-22
US20090020825A1
Electricity

Forming dual metal complementary metal oxide semiconductor integrated circuits

#13 | 2008-10-02
US20080242012A1
Electricity

High quality silicon oxynitride transition layer for high-k/metal gate transistors

#14 | 2008-09-18
US20080224235A1
Electricity

Selectively depositing aluminum in a replacement metal gate process

#15 | 2008-07-03
US20080157212A1
Electricity

Tunable gate electrode work function material for transistor applications

#16 | 2008-04-17
US20080090397A1
Electricity

Nonplanar transistors with metal gate electrodes

#17 | 2007-05-03
US20070096163A1
Electricity

Transition metal alloys for use a gate electrode and device incorporating these alloys

#18 | 2007-04-03
US10642426
-

Deposition of carbon- and transition metal-containing thin films

#19 | 2006-12-05
US10799996
-

Polysilicon opening polish

#20 | 2006-07-20
US20060160342A1
Electricity

Forming dual metal complementary metal oxide semiconductor integrated circuits

#21 | 2006-06-29
US20060138553A1
Electricity

Method of forming a metal oxide dielectric

#22 | 2006-06-29
US20060138552A1
Electricity

Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material

#23 | 2006-04-06
US20060071275A1
Electricity

Nonplanar transistors with metal gate electrodes

#24 | 2006-02-14
US10230944
-

Metal-gate electrode for CMOS transistor applications

#25 | 2006-02-09
US20060030104A1
Electricity

Integrating n-type and p-type metal gate transistors

#26 | 2006-01-26
US20060017122A1
Electricity

Metalgate electrode for PMOS transistor

#27 | 2006-01-12
US20060006522A1
Electricity

Forming dual metal complementary metal oxide semiconductor integrated circuits

#28 | 2006-01-05
US20060000489A1
Physics

In-situ cleaning of light source collector optics

#29 | 2005-12-22
US20050280050A1
Electricity

Transition metal alloys for use as a gate electrode and devices incorporating these alloys

#30 | 2005-11-29
US10197628
-

In-situ cleaning of light source collector optics

#31 | 2005-10-20
US20050233530A1
Electricity

Enhanced gate structure

#32 | 2005-10-13
US20050224886A1
Electricity

Semiconductor device having a laterally modulated gate workfunction and method of fabrication

#33 | 2005-10-11
US10851360
-

Integrating n-type and p-type metal gate transistors

#34 | 2005-10-06
US20050221548A1
Electricity

Semiconductor device having a laterally modulated gate workfunction and method of fabrication

#35 | 2005-07-21
US20050158974A1
Electricity

Semiconductor device having a metal gate electrode

#36 | 2005-05-10
US10431166
-

Method for making a semiconductor device having a metal gate electrode

#37 | 2005-03-03
US20050045961A1
Electricity

Enhanced gate structure

#38 | 2005-02-24
US20050040469A1
Electricity

integrating n-type and P-type metal gate transistors

#39 | 2005-02-22
US10327293
-

Integrating n-type and p-type metal gate transistors

#40 | 2005-02-17
US20050037557A1
Electricity

Transition metal alloys for use as a gate electrode and devices incorporating these alloys

#41 | 2005-02-10
US20050032318A1
Electricity

Method for making a semiconductor device having a high-k gate dielectric

#42 | 2005-02-03
US20050026408A1
Electricity

Preventing silicide formation at the gate electrode in a replacement metal gate technology

#43 | 2005-02-01
US10315646
-

Methods of forming a multilayer stack alloy for work function engineering

#44 | 2005-01-13
US20050009311A1
Electricity

Methods of forming a multilayer stack alloy for work function engineering

InventorID:

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