Beaverton, Oregon
United States
44
2021-01-14
The entities that hold a legal rights for patent applications filed by inventor Doczy Mark:
Mark Doczy from Beaverton, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the same
#2 | 2020-01-02Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion
#3 | 2020-01-02Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains
#4 | 2019-10-24Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication
#5 | 2019-10-03Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication
#6 | 2019-10-03SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED STABILITY AND THEIR METHODS OF FABRICATION
#7 | 2019-10-03Self-aligned spin orbit torque (SOT) memory devices and their methods of fabrication
#8 | 2019-06-20Spin transfer torque memory devices having heusler magnetic tunnel junctions
#9 | 2011-04-28Transition metal alloys for use as a gate electrode and devices incorporating these alloys
#10 | 2010-06-10Tunable gate electrode work function material for transistor applications
#11 | 2009-06-11METHOD OF FORMING A NONPLANAR TRANSISTOR WITH SIDEWALL SPACERS
#12 | 2009-01-22Forming dual metal complementary metal oxide semiconductor integrated circuits
#13 | 2008-10-02High quality silicon oxynitride transition layer for high-k/metal gate transistors
#14 | 2008-09-18Selectively depositing aluminum in a replacement metal gate process
#15 | 2008-07-03Tunable gate electrode work function material for transistor applications
#16 | 2008-04-17Nonplanar transistors with metal gate electrodes
#17 | 2007-05-03Transition metal alloys for use a gate electrode and device incorporating these alloys
#18 | 2007-04-03Deposition of carbon- and transition metal-containing thin films
#19 | 2006-12-05Polysilicon opening polish
#20 | 2006-07-20Forming dual metal complementary metal oxide semiconductor integrated circuits
#21 | 2006-06-29Method of forming a metal oxide dielectric
#22 | 2006-06-29Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material
#23 | 2006-04-06Nonplanar transistors with metal gate electrodes
#24 | 2006-02-14Metal-gate electrode for CMOS transistor applications
#25 | 2006-02-09Integrating n-type and p-type metal gate transistors
#26 | 2006-01-26Metalgate electrode for PMOS transistor
#27 | 2006-01-12Forming dual metal complementary metal oxide semiconductor integrated circuits
#28 | 2006-01-05In-situ cleaning of light source collector optics
#29 | 2005-12-22Transition metal alloys for use as a gate electrode and devices incorporating these alloys
#30 | 2005-11-29In-situ cleaning of light source collector optics
#31 | 2005-10-20Enhanced gate structure
#32 | 2005-10-13Semiconductor device having a laterally modulated gate workfunction and method of fabrication
#33 | 2005-10-11Integrating n-type and p-type metal gate transistors
#34 | 2005-10-06Semiconductor device having a laterally modulated gate workfunction and method of fabrication
#35 | 2005-07-21Semiconductor device having a metal gate electrode
#36 | 2005-05-10Method for making a semiconductor device having a metal gate electrode
#37 | 2005-03-03Enhanced gate structure
#38 | 2005-02-24integrating n-type and P-type metal gate transistors
#39 | 2005-02-22Integrating n-type and p-type metal gate transistors
#40 | 2005-02-17Transition metal alloys for use as a gate electrode and devices incorporating these alloys
#41 | 2005-02-10Method for making a semiconductor device having a high-k gate dielectric
#42 | 2005-02-03Preventing silicide formation at the gate electrode in a replacement metal gate technology
#43 | 2005-02-01Methods of forming a multilayer stack alloy for work function engineering
#44 | 2005-01-13Methods of forming a multilayer stack alloy for work function engineering
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