Berkeley, California
United States
32
2024-08-29
The entities that hold a legal rights for patent applications filed by inventor Gajek Marcin:
Marcin Gajek from Berkeley, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Text reduction and analysis interface to a text generation modeling system
#2 | 2024-01-02Text reduction and analysis interface to a text generation modeling system
#3 | 2022-11-24THREE-DIMENSIONAL (3D) MAGNETIC MEMORY DEVICES COMPRISING A MAGNETIC TUNNEL JUNCTION (MTJ) HAVING A METALLIC BUFFER LAYER
#4 | 2022-01-27Patterned silicide structures and methods of manufacture
#5 | 2020-09-24Three-dimensional (3D) magnetic memory devices comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer
#6 | 2020-07-02Patterned silicide structures and methods of manufacture
#7 | 2020-06-18System and method for training artificial neural networks
#8 | 2020-06-18System and method for training artificial neural networks
#9 | 2020-04-02Magnetic memory element with voltage controlled magnetic anistropy
#10 | 2020-04-02Defect propagation structure and mechanism for magnetic memory
#11 | 2020-04-02Defect injection structure and mechanism for magnetic memory
#12 | 2020-02-06Systems and methods utilizing serial and parallel configurations of magnetic memory devices
#13 | 2020-01-09High density MRAM integration
#14 | 2020-01-09High density MRAM integration
#15 | 2020-01-09Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
#16 | 2020-01-09Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
#17 | 2020-01-09Read-out techniques for multi-bit cells
#18 | 2020-01-09Multi-bit cell read-out techniques
#19 | 2019-07-11Method for manufacturing a magnetic memory element array using high angle side etch to open top electrical contact
#20 | 2019-07-11High density 3D magnetic random access memory (MRAM) cell integration using wafer cut and transfer
#21 | 2019-07-11Dual channel/gate vertical field-effect transistor (FET) for use with a perpendicular magnetic tunnel junction (PMTJ)
#22 | 2019-07-04Methods of fabricating three-dimensional magnetic memory devices
#23 | 2019-07-04Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer
#24 | 2019-07-04Spin hall effect (SHE) assisted three-dimensional spin transfer torque magnetic random access memory (STT-MRAM)
#25 | 2019-07-04Systems and methods utilizing parallel configurations of magnetic memory devices
#26 | 2019-07-04Flexible substrate for use with a perpendicular magnetic tunnel junction (PMTJ)
#27 | 2019-07-04Three-dimensional magnetic memory devices
#28 | 2019-07-04Methods and systems for writing to magnetic memory devices utilizing alternating current
#29 | 2019-07-04Systems and methods utilizing serial configurations of magnetic memory devices
#30 | 2019-07-04Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layer
#31 | 2019-07-04Perpendicular magnetic tunnel junction memory cells having shared source contacts
#32 | 2019-01-22Magnetic random access memory having improved reliability through thermal cladding
2551571 ⎘