Fremont, California
United States
23
2019-02-19
22
2019-02-19
These are the the leading inventors for applications assigned to Spin Transfer Technologies, Inc.:
Spin Transfer Technologies, Inc. based in Fremont, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Method for combining NVM class and SRAM class MRAM elements on the same chip
#2 | 2019-02-05 ✅ Patent 10,199,083 granted on 2019-02-05Three-terminal MRAM with ac write-assist for low read disturb
#3 | 2019-01-22 ✅ Patent 10,186,551 granted on 2019-01-22Buried tap for a vertical transistor used with a perpendicular magnetic tunnel junction (PMTJ)
#4 | 2019-01-22 ✅ Patent 10,186,308 granted on 2019-01-22Magnetic random access memory having improved reliability through thermal cladding
#5 | 2019-01-03 ✅ Patent 10,643,680 granted on 2020-05-05Memory cell having magnetic tunnel junction and thermal stability enhancement layer
#6 | 2018-11-27 ✅ Patent 10,141,499 granted on 2018-11-27Perpendicular magnetic tunnel junction device with offset precessional spin current layer
#7 | 2018-11-01 ✅ Patent 10,553,787 granted on 2020-02-04Precessional spin current structure for MRAM
#8 | 2018-10-30 ✅ Patent 10,115,446 granted on 2018-10-30Spin transfer torque MRAM device with error buffer
#9 | 2018-07-24 ✅ Patent 10,032,978 granted on 2018-07-24MRAM with reduced stray magnetic fields
#10 | 2018-05-03 ✅ Patent 10,192,602 granted on 2019-01-29Smart cache design to prevent overflow for a memory device with a dynamic redundancy register
#11 | 2018-05-03 ✅ Patent 10,192,601 granted on 2019-01-29Memory instruction pipeline with an additional write stage in a memory device that uses dynamic redundancy registers
#12 | 2018-02-15 ✅ Patent 10,026,892 granted on 2018-07-17Precessional spin current structure for MRAM
#13 | 2017-11-16 ✅ Patent 10,147,872 granted on 2018-12-04Spin transfer torque structure for MRAM devices having a spin current injection capping layer
#14 | 2017-11-09 ✅ Patent 10,381,553 granted on 2019-08-13Memory cell having magnetic tunnel junction and thermal stability enhancement layer
#15 | 2017-08-03 ✅ Patent 9,741,926 granted on 2017-08-22Memory cell having magnetic tunnel junction and thermal stability enhancement layer
#16 | 2017-02-16 ✅ Patent 10,163,479 granted on 2018-12-25Method and apparatus for bipolar memory write-verify
#17 | 2017-02-02 ✅ Patent 9,773,974 granted on 2017-09-26Polishing stop layer(s) for processing arrays of semiconductor elements
#18 | 2016-12-22 ✅ Patent 9,853,206 granted on 2017-12-26Precessional spin current structure for MRAM
#19 | 2016-10-27 ✅ Patent 9,728,712 granted on 2017-08-08Spin transfer torque structure for MRAM devices having a spin current injection capping layer
#20 | 2016-06-09 ✅ Patent 9,406,876 granted on 2016-08-02Method for manufacturing MTJ memory device
#21 | 2016-03-24 ✅ Patent 9,337,412 granted on 2016-05-10Magnetic tunnel junction structure for MRAM device
#22 | 2016-01-28 ✅ Patent 9,263,667 granted on 2016-02-16Method for manufacturing MTJ memory device
#23 | 2015-10-01MAGNETIC TUNNEL JUNCTION FOR MRAM DEVICE
Also check out Spin Transfer Technologies, Inc.'s (Fremont, United States) applicant profile with 46 patent applications submitted.
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