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Inventor profile of:

Markus Weyers

City:

Wildau

Country:

Germany

Published Applications:

Last publication date:

2026-04-16

Top Assignees for applications by Markus Weyers

The entities that hold a legal rights for patent applications filed by inventor Weyers Markus:

FORSCHUNGSVERBUND BERLIN E.V. 6 Berlin, Germany
FREIBERGER COMPOUND MATERIALS GMBH 3 Freiberg, Germany
Forschungsverbung Berlin E.V. 1 Berlin, Germany
Forschungsvebund Berlin E.V. 1 Berlin, Germany
Freiberger Compound Materials GMBH 1 Freiberger, Germany

Recent patent applications by Weyers Markus

Markus Weyers from Wildau, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-04-16

US20260106434A1

Electricity

VERTICAL CAVITY SURFACE EMITTING SEMICONDUCTOR LASER AND METHOD FOR PRODUCING SAME

#2 | 2018-08-23

US20180237944A1

Chemistry; metallurgy

Processes for producing III-N single crystals, and III-N single crystal

#3 | 2015-10-15

US20150292111A1

Chemistry; metallurgy

Method for producing III-N single crystals, and III-N single crystal

#4 | 2015-01-01

US20150001409A1

Electricity

Optical Assembly

#5 | 2014-03-13

US20140070272A1

Electricity

Photodetector for ultraviolet radiation, having a high sensitivity and a low dark current

#6 | 2013-10-17

US20130270518A1

Electricity

System for frequency conversion, semiconducting device and method for operating and manufacturing the same

#7 | 2013-05-23

US20130128911A1

Electricity

Diode laser and method for manufacturing a high-efficiency diode laser

#8 | 2012-06-14

US20120146047A1

Electricity

P-contact and light-emitting diode for the ultraviolet spectral range

#9 | 2011-09-22

US20110228805A1

Electricity

Two-cavity surface-emitting laser

#10 | 2010-04-22

US20100096727A1

Electricity

Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy

#11 | 2010-02-04

US20100025712A1

Electricity

Light-emitting semiconductor component comprising electroluminescent and photoluminescent layers and associated method of production

#12 | 2008-07-17

US20080171133A1

Chemistry; metallurgy

Method For the Production of C-Plane Oriented Gan Substrates or AlxGa1-xN Substrates

InventorID:

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