Freiberg
Germany
35
2022-01-27
35
2025-01-21
These are the the leading inventors for applications assigned to FREIBERGER COMPOUND MATERIALS GMBH:
FREIBERGER COMPOUND MATERIALS GMBH based in Freiberg, DE has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity
#2 | 2019-09-12 ✅ Patent 10,883,191 granted on 2021-01-05Method for producing III-N templates and the reprocessing thereof and III-N template
#3 | 2019-05-30 ✅ Patent 11,505,847 granted on 2022-11-22Method and apparatus for Ga-recovery
#4 | 2018-08-23 ✅ Patent 10,584,427 granted on 2020-03-10Processes for producing III-N single crystals, and III-N single crystal
#5 | 2018-06-07 ✅ Patent 11,170,989 granted on 2021-11-09Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity
#6 | 2015-12-24 ✅ Patent 10,460,924 granted on 2019-10-29Process for producing a gallium arsenide substrate which includes marangoni drying
#7 | 2015-10-15 ✅ Patent 9,896,779 granted on 2018-02-20Method for producing III-N single crystals, and III-N single crystal
#8 | 2015-02-19 ✅ Patent 10,309,037 granted on 2019-06-04Method for producing III-N templates and the reprocessing thereof and III-N template
#9 | 2014-06-05 ✅ Patent 9,461,121 granted on 2016-10-04Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such
#10 | 2014-04-17 ✅ Patent 9,368,585 granted on 2016-06-14Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal
#11 | 2013-12-05 ✅ Patent 8,815,392 granted on 2014-08-26Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
#12 | 2013-06-27 ✅ Patent 10,767,255 granted on 2020-09-08Device and method of evaporating a material from a metal melt
#13 | 2012-01-26 ✅ Patent 9,856,579 granted on 2018-01-02Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy
#14 | 2011-12-29 ✅ Patent 8,723,288 granted on 2014-05-13Method of cutting single crystals
#15 | 2011-09-22 ✅ Patent 8,536,030 granted on 2013-09-17Semipolar semiconductor crystal and method for manufacturing the same
#16 | 2011-01-27 ✅ Patent 9,115,444 granted on 2015-08-25Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon
#17 | 2010-04-22 ✅ Patent 8,591,652 granted on 2013-11-26Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy
#18 | 2010-01-28 ✅ Patent 8,415,766 granted on 2013-04-09Process for smoothening III-N substrates
#19 | 2010-01-14 ✅ Patent 8,329,295 granted on 2012-12-11Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
#20 | 2009-11-19 ✅ Patent 8,097,080 granted on 2012-01-17Method of cutting single crystals
#21 | 2009-04-23 ✅ Patent 9,181,633 granted on 2015-11-10Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
#22 | 2008-12-18 ✅ Patent 8,652,253 granted on 2014-02-18Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal
#23 | 2008-10-23 ✅ Patent 8,372,199 granted on 2013-02-12Bulk GaN and AlGaN single crystals
#24 | 2008-08-28 ✅ Patent 8,771,560 granted on 2014-07-08Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
#25 | 2008-07-10 ✅ Patent 7,998,273 granted on 2011-08-16Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon
#26 | 2008-04-10 ✅ Patent 8,778,078 granted on 2014-07-15Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such
#27 | 2008-01-31 ✅ Patent 7,585,772 granted on 2009-09-08Process for smoothening III-N substrates
#28 | 2007-11-08 ✅ Patent 8,048,224 granted on 2011-11-01Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate
#29 | 2007-07-19 ✅ Patent 7,727,332 granted on 2010-06-01Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby
#30 | 2007-03-01 ✅ Patent 7,195,542 granted on 2007-03-27Process, apparatus and slurry for wire sawing
#31 | 2007-01-18 ✅ Patent 8,025,729 granted on 2011-09-27Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
#32 | 2007-01-18 ✅ Patent 7,410,540 granted on 2008-08-12Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
#33 | 2006-11-21 ✅ Patent 7,137,865 granted on 2006-11-21Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation
#34 | 2006-11-02 ✅ Patent 8,061,345 granted on 2011-11-22Method for wire sawing
#35 | 2005-08-02 ✅ Patent 6,923,171 granted on 2005-08-02Device and method for determining the orientation of a crystallographic plane in relation to a crystal surface and device for cutting a single crystal in a cutting machine
Also check out Freiberger Compound Materials GMBH's (Freiberg, Germany) applicant profile with 14 patent applications submitted.
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