Michael GROBIS

SPIN-ORBIT TORQUE MAGNETIC DEVICE AND METHOD OF OPERATING THEREOF WITHOUT AN EXTERNAL MAGNETIC FIELD

VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY DEVICE INCLUDING AN ON-CHIP ELECTROMAGNET

TUNNELING BARRIER RESISTOR AND METHODS FOR FORMING THE SAME

READ FOR MEMORY CELL WITH THRESHOLD SWITCHING SELECTOR

FAST SELF-REFERENCED READ OF PROGRAMMABLE RESISTANCE MEMORY CELLS

First fire and cold start in memories with threshold switching selectors

Cross-point array IHOLD read margin improvement

Programmable ECC for MRAM mixed-read scheme

Mixed current-forced read scheme for MRAM array with selector

Power off recovery in cross-point memory with threshold switching selectors

Concurrent multi-bit self-referenced read of programmable resistance memory cells in cross-point array

Concurrent write to programmable resistance memory cells in cross-point array

Forced current access with voltage clamping in cross-point array

Forced current access with voltage clamping in cross-point array

Forced current access with voltage clamping in cross-point array

Concurrent multi-bit access in cross-point array

Power off recovery in cross-point memory with threshold switching selectors

Multi-level ultra-low power inference engine accelerator

Ultralow power inference engine with external magnetic field programming assistance

Memory device containing selector with current focusing layer and methods of making the same

Perpendicular SOT MRAM

Perpendicular spin transfer torque MRAM memory cell with in-stack thermal barriers

Memory device containing ovonic threshold switch material thermal isolation and method of making the same

Heat assisted perpendicular spin transfer torque MRAM memory cell

Phase change memory device with reduced read disturb and method of making the same

Electrostatic discharge protection devices including a field-induced switching element