Inventor profile of:

Prashant Phatak

City:

San Jose, California

Country:

United States

Published Applications:

37

Last publication date:

2017-04-27

Top Assignees for applications by Prashant Phatak

The entities that hold a legal rights for patent applications filed by inventor Phatak Prashant:

Recent patent applications by Phatak Prashant

Prashant Phatak from San Jose, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2017-04-27
US20170117282A1
Electricity

DRAM Capacitors and Methods for Forming the Same

#2 | 2017-04-13
US20170104031A1
Electricity

Selector Elements

#3 | 2017-03-23
US20170084643A1
Electricity

Storage Capacitors for Displays and Methods for Forming the Same

#4 | 2015-05-28
US20150147865A1
Electricity

Resistive-switching memory elements having improved switching characteristics

#5 | 2015-03-10
US12610236
-

Resistive-switching memory elements having improved switching characteristics

#6 | 2013-10-17
US20130273707A1
Electricity

ALD processing techniques for forming non-volatile resistive switching memories

#7 | 2013-06-06
US20130140511A1
Electricity

Resistive-switching memory element

#8 | 2012-12-13
US20120315725A1
Electricity

Surface treatment to improve resistive-switching characteristics

#9 | 2012-12-06
US20120305878A1
Electricity

RESISTIVE SWITCHING MEMORY DEVICE

#10 | 2012-11-15
US20120286230A1
Electricity

Confinement techniques for non-volatile resistive-switching memories

#11 | 2012-10-30
US12603510
-

Resistive-switching memory element

#12 | 2012-10-11
US20120256155A1
Chemistry; metallurgy

Closed loop sputtering controlled to enhance electrical characteristics in deposited layer

#13 | 2012-08-16
US20120205610A1
Electricity

Resistive switching memory element including doped silicon electrode

#14 | 2012-06-14
US20120149137A1
Physics

Methods of combinatorial processing for screening multiple samples on a semiconductor substrate

#15 | 2012-04-12
US20120088328A1
Electricity

Method of forming non-volatile resistive-switching memories

#16 | 2012-02-23
US20120044751A1
Physics

Bipolar resistive-switching memory with a single diode per memory cell

#17 | 2012-02-09
US20120032133A1
Electricity

Surface treatment to improve resistive-switching characteristics

#18 | 2012-02-02
US20120025164A1
Physics

Variable resistance memory with a select device

#19 | 2012-01-05
US20120001148A1
Electricity

Stress-engineered resistance-change memory device

#20 | 2011-12-06
US12607898
-

Biploar resistive-switching memory with a single diode per memory cell

#21 | 2011-11-03
US20110269267A1
Electricity

ALD processing techniques for forming non-volatile resistive-switching memories

#22 | 2011-11-01
US12580196
-

Stress-engineered resistance-change memory device

#23 | 2011-10-13
US20110248264A1
Physics

Methods of combinatorial processing for screening multiple samples on a semiconductor substrate

#24 | 2011-08-25
US20110204312A1
Electricity

Confinement techniques for non-volatile resistive-switching memories

#25 | 2011-08-25
US20110204311A1
Electricity

Non-volatile resistive-switching memories formed using anodization

#26 | 2011-08-25
US20110203085A1
Electricity

Titanium-based high-K dielectric films

#27 | 2010-12-30
US20100330269A1
Electricity

Titanium-based high-K dielectric films

#28 | 2010-10-14
US20100258781A1
Electricity

Resistive switching memory element including doped silicon electrode

#29 | 2010-09-30
US20100243983A1
Electricity

Controlled localized defect paths for resistive memories

#30 | 2010-01-07
US20100001269A1
Physics

Methods of combinatorial processing for screening multiple samples on a semiconductor substrate

#31 | 2009-12-10
US20090302296A1
Electricity

ALD processing techniques for forming non-volatile resistive-switching memories

#32 | 2009-11-12
US20090278110A1
Electricity

Non-volatile resistive-switching memories formed using anodization

#33 | 2009-11-12
US20090278109A1
Electricity

Confinement techniques for non-volatile resistive-switching memories

#34 | 2009-11-05
US20090273087A1
Chemistry; metallurgy

Closed-loop sputtering controlled to enhance electrical characteristics in deposited layer

#35 | 2009-11-05
US20090272962A1
Electricity

Reduction of forming voltage in semiconductor devices

#36 | 2009-11-05
US20090272961A1
Electricity

Surface treatment to improve resistive-switching characteristics

#37 | 2009-11-05
US20090272959A1
Electricity

Non-volatile resistive-switching memories

InventorID:

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