Inventor profile of:

Frank Pfirsch

City:

Munich

Country:

Germany

Published Applications:

71

Last publication date:

2023-08-31

Top Assignees for applications by Frank Pfirsch

The entities that hold a legal rights for patent applications filed by inventor Pfirsch Frank:

Recent patent applications by Pfirsch Frank

Frank Pfirsch from Munich, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-08-31
US20230275576A1
Electricity

Semiconductor switching module with insulated gate bipolar transistor and unipolar switching device

#2 | 2019-03-07
US20190074352A1
Electricity

Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component

#3 | 2017-05-11
US20170133465A1
Electricity

Method of forming a semiconductor device and semiconductor device

#4 | 2016-08-04
US20160226477A1
Electricity

Method of operating a reverse conducting IGBT

#5 | 2016-04-07
US20160099707A1
Electricity

Circuit with a plurality of transistors and method for controlling such a circuit

#6 | 2016-02-04
US20160035862A1
Electricity

Field plate trench transistor and method for producing it

#7 | 2016-01-07
US20160005818A1
Electricity

IGBT having at least one first type transistor cell and reduced feedback capacitance

#8 | 2015-12-03
US20150349097A1
Electricity

Method of manufacturing a semiconductor device having a rectifying junction at the side wall of a trench

#9 | 2015-11-19
US20150333161A1
Electricity

Insulated gate bipolar transistor

#10 | 2015-10-01
US20150279985A1
Electricity

Trench transistor device

#11 | 2015-08-20
US20150236143A1
Electricity

Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode

#12 | 2015-06-25
US20150179637A1
Electricity

Semiconductor devices

#13 | 2015-04-23
US20150109050A1
Electricity

Method of operating a reverse conducting IGBT

#14 | 2015-04-02
US20150091053A1
Electricity

IGBT with reduced feedback capacitance

#15 | 2015-02-26
US20150056794A1
Electricity

Method for forming a semiconductor device with an integrated poly-diode

#16 | 2015-01-29
US20150028415A1
Electricity

Semiconductor component having a transition region

#17 | 2015-01-15
US20150014743A1
Electricity

IGBT with emitter electrode electrically connected with an impurity zone

#18 | 2015-01-08
US20150008480A1
Electricity

Semiconductor component

#19 | 2014-10-02
US20140291809A1
Electricity

Semiconductor substrate and a method of manufacturing the same

#20 | 2014-09-25
US20140284702A1
Electricity

Field plate trench transistor and method for producing it

#21 | 2014-07-31
US20140213022A1
Electricity

Method of manufacturing a reduced free-charge carrier lifetime semiconductor structure

#22 | 2014-07-24
US20140203349A1
Electricity

METHOD OF PRODUCING A HIGH-VOLTAGE-RESISTANT SEMICONDUCTOR COMPONENT HAVING VERTICALLY CONDUCTIVE SEMICONDUCTOR BODY AREAS AND A TRENCH STRUCTURE

#23 | 2014-01-30
US20140027814A1
Electricity

Power device and a reverse conducting power IGBT

#24 | 2014-01-16
US20140015007A1
Electricity

Semiconductor device with charge carrier lifetime reduction means

#25 | 2014-01-02
US20140001528A1
Electricity

Semiconductor component with a drift region and a drift control region

#26 | 2013-12-26
US20130341674A1
Electricity

Reverse conducting IGBT

#27 | 2013-12-26
US20130341673A1
Electricity

Reverse Conducting IGBT

#28 | 2013-11-14
US20130299835A1
Electricity

Semiconductor device with an integrated poly-diode

#29 | 2013-10-17
US20130270632A1
Electricity

Semiconductor device having a floating semiconductor zone

#30 | 2013-10-10
US20130264607A1
Electricity

Reverse conducting insulated gate bipolar transistor

#31 | 2013-07-11
US20130175605A1
Electricity

Field plate trench transistor and method for producing it

#32 | 2013-06-06
US20130140616A1
Electricity

Integrated circuit including a power transistor and an auxiliary transistor

#33 | 2013-05-09
US20130113087A1
Electricity

Semiconductor component

#34 | 2013-01-03
US20130001640A1
Electricity

Semiconductor device having a floating semiconductor zone

#35 | 2012-12-13
US20120313225A1
Electricity

Integrated circuit having doped semiconductor body and method

#36 | 2012-07-19
US20120181575A1
Electricity

Semiconductor device and a reverse conducting IGBT

#37 | 2012-03-01
US20120049898A1
Electricity

Circuit and method for driving a transistor component based on a load condition

#38 | 2012-03-01
US20120049273A1
Electricity

Depletion MOS transistor and charging arrangement

#39 | 2012-03-01
US20120049270A1
Electricity

Method for forming a semiconductor device, and a semiconductor with an integrated poly-diode

#40 | 2011-09-08
US20110215858A1
Electricity

Controlling the recombination rate in a bipolar semiconductor component

#41 | 2011-08-25
US20110207310A1
Electricity

Semiconductor device with a field stop zone and process of producing the same

#42 | 2011-06-30
US20110156095A1
Electricity

Semiconductor component with an emitter control electrode

#43 | 2011-04-28
US20110095362A1
Electricity

Field plate trench transistor and method for producing it

#44 | 2011-03-03
US20110049593A1
Electricity

Semiconductor component

#45 | 2011-02-03
US20110024791A1
Electricity

Bipolar semiconductor device and manufacturing method

#46 | 2011-01-27
US20110018029A1
Electricity

Semiconductor device having a floating semiconductor zone

#47 | 2010-05-27
US20100127304A1
Electricity

Bipolar semiconductor device and manufacturing method

#48 | 2010-04-01
US20100078710A1
Electricity

Semiconductor component with a drift zone and a drift control zone

#49 | 2010-02-25
US20100044788A1
Electricity

Semiconductor device with a charge carrier compensation structure and process

#50 | 2009-12-31
US20090325361A1
Electricity

Method for producing a semiconductor including a foreign material layer

#51 | 2009-11-19
US20090283866A1
Electricity

High-ohmic semiconductor substrate and a method of manufacturing the same

#52 | 2009-11-19
US20090283799A1
Electricity

Reduced free-charge carrier lifetime device

#53 | 2009-09-03
US20090218621A1
Electricity

Semiconductor component with a drift region and a drift control region

#54 | 2009-05-21
US20090130806A1
Electricity

Power semiconductor component with charge compensation structure and method for the fabrication thereof

#55 | 2009-05-07
US20090114986A1
Electricity

Field plate trench transistor and method for producing it

#56 | 2009-04-30
US20090108303A1
Electricity

Semiconductor component and method

#57 | 2009-04-02
US20090085103A1
Electricity

Semiconductor device including a free wheeling diode

#58 | 2009-02-05
US20090032851A1
Electricity

Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component

#59 | 2009-01-29
US20090026532A1
Electricity

Short circuit limiting in power semiconductor devices

#60 | 2008-08-21
US20080197405A1
Electricity

Trench diffusion isolation in semiconductor devices

#61 | 2008-06-12
US20080135871A1
Electricity

Semiconductor component

#62 | 2008-05-29
US20080122001A1
Electricity

Integrated circuit having doped semiconductor body and method

#63 | 2008-04-17
US20080087952A1
Electricity

Semiconductor component having a transition region

#64 | 2008-03-06
US20080054369A1
Electricity

Semiconductor device with a field stop zone and process of producing the same

#65 | 2008-01-03
US20080001257A1
Electricity

Semiconductor device with a field stop zone

#66 | 2007-08-09
US20070181943A1
Electricity

Lateral power transistor and method for producing same

#67 | 2007-07-26
US20070170514A1
Electricity

IGBT device and related device having robustness under extreme conditions

#68 | 2007-06-21
US20070138544A1
Electricity

FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT

#69 | 2007-05-17
US20070108513A1
Electricity

Method for fabricating a semiconductor component

#70 | 2007-03-08
US20070052058A1
Electricity

High blocking semiconductor component comprising a drift section

#71 | 2006-04-20
US20060081964A1
Electricity

Semiconductor device

InventorID:

270331 ⎘