Munich
Germany
71
2023-08-31
The entities that hold a legal rights for patent applications filed by inventor Pfirsch Frank:
Frank Pfirsch from Munich, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Semiconductor switching module with insulated gate bipolar transistor and unipolar switching device
#2 | 2019-03-07Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component
#3 | 2017-05-11Method of forming a semiconductor device and semiconductor device
#4 | 2016-08-04Method of operating a reverse conducting IGBT
#5 | 2016-04-07Circuit with a plurality of transistors and method for controlling such a circuit
#6 | 2016-02-04Field plate trench transistor and method for producing it
#7 | 2016-01-07IGBT having at least one first type transistor cell and reduced feedback capacitance
#8 | 2015-12-03Method of manufacturing a semiconductor device having a rectifying junction at the side wall of a trench
#9 | 2015-11-19Insulated gate bipolar transistor
#10 | 2015-10-01Trench transistor device
#11 | 2015-08-20Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode
#12 | 2015-06-25Semiconductor devices
#13 | 2015-04-23Method of operating a reverse conducting IGBT
#14 | 2015-04-02IGBT with reduced feedback capacitance
#15 | 2015-02-26Method for forming a semiconductor device with an integrated poly-diode
#16 | 2015-01-29Semiconductor component having a transition region
#17 | 2015-01-15IGBT with emitter electrode electrically connected with an impurity zone
#18 | 2015-01-08Semiconductor component
#19 | 2014-10-02Semiconductor substrate and a method of manufacturing the same
#20 | 2014-09-25Field plate trench transistor and method for producing it
#21 | 2014-07-31Method of manufacturing a reduced free-charge carrier lifetime semiconductor structure
#22 | 2014-07-24METHOD OF PRODUCING A HIGH-VOLTAGE-RESISTANT SEMICONDUCTOR COMPONENT HAVING VERTICALLY CONDUCTIVE SEMICONDUCTOR BODY AREAS AND A TRENCH STRUCTURE
#23 | 2014-01-30Power device and a reverse conducting power IGBT
#24 | 2014-01-16Semiconductor device with charge carrier lifetime reduction means
#25 | 2014-01-02Semiconductor component with a drift region and a drift control region
#26 | 2013-12-26Reverse conducting IGBT
#27 | 2013-12-26Reverse Conducting IGBT
#28 | 2013-11-14Semiconductor device with an integrated poly-diode
#29 | 2013-10-17Semiconductor device having a floating semiconductor zone
#30 | 2013-10-10Reverse conducting insulated gate bipolar transistor
#31 | 2013-07-11Field plate trench transistor and method for producing it
#32 | 2013-06-06Integrated circuit including a power transistor and an auxiliary transistor
#33 | 2013-05-09Semiconductor component
#34 | 2013-01-03Semiconductor device having a floating semiconductor zone
#35 | 2012-12-13Integrated circuit having doped semiconductor body and method
#36 | 2012-07-19Semiconductor device and a reverse conducting IGBT
#37 | 2012-03-01Circuit and method for driving a transistor component based on a load condition
#38 | 2012-03-01Depletion MOS transistor and charging arrangement
#39 | 2012-03-01Method for forming a semiconductor device, and a semiconductor with an integrated poly-diode
#40 | 2011-09-08Controlling the recombination rate in a bipolar semiconductor component
#41 | 2011-08-25Semiconductor device with a field stop zone and process of producing the same
#42 | 2011-06-30Semiconductor component with an emitter control electrode
#43 | 2011-04-28Field plate trench transistor and method for producing it
#44 | 2011-03-03Semiconductor component
#45 | 2011-02-03Bipolar semiconductor device and manufacturing method
#46 | 2011-01-27Semiconductor device having a floating semiconductor zone
#47 | 2010-05-27Bipolar semiconductor device and manufacturing method
#48 | 2010-04-01Semiconductor component with a drift zone and a drift control zone
#49 | 2010-02-25Semiconductor device with a charge carrier compensation structure and process
#50 | 2009-12-31Method for producing a semiconductor including a foreign material layer
#51 | 2009-11-19High-ohmic semiconductor substrate and a method of manufacturing the same
#52 | 2009-11-19Reduced free-charge carrier lifetime device
#53 | 2009-09-03Semiconductor component with a drift region and a drift control region
#54 | 2009-05-21Power semiconductor component with charge compensation structure and method for the fabrication thereof
#55 | 2009-05-07Field plate trench transistor and method for producing it
#56 | 2009-04-30Semiconductor component and method
#57 | 2009-04-02Semiconductor device including a free wheeling diode
#58 | 2009-02-05Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component
#59 | 2009-01-29Short circuit limiting in power semiconductor devices
#60 | 2008-08-21Trench diffusion isolation in semiconductor devices
#61 | 2008-06-12Semiconductor component
#62 | 2008-05-29Integrated circuit having doped semiconductor body and method
#63 | 2008-04-17Semiconductor component having a transition region
#64 | 2008-03-06Semiconductor device with a field stop zone and process of producing the same
#65 | 2008-01-03Semiconductor device with a field stop zone
#66 | 2007-08-09Lateral power transistor and method for producing same
#67 | 2007-07-26IGBT device and related device having robustness under extreme conditions
#68 | 2007-06-21FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT
#69 | 2007-05-17Method for fabricating a semiconductor component
#70 | 2007-03-08High blocking semiconductor component comprising a drift section
#71 | 2006-04-20Semiconductor device
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