Encinitas, California
United States
35
2019-09-26
The entities that hold a legal rights for patent applications filed by inventor Norman John Anthony Thomas:
John Anthony Thomas Norman from Encinitas, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Volatile dihydropyrazinly and dihydropyrazine metal complexes
#2 | 2018-11-15Volatile Dihydropyrazinly and Dihydropyrazine Metal Complexes
#3 | 2015-01-29Volatile dihydropyrazinly and dihydropyrazine metal complexes
#4 | 2014-08-28Volatile Imidazoles and Group 2 Imidazole Based Metal Precursors
#5 | 2013-10-03Group 2 Imidazolate Formulations for Direct Liquid Injection
#6 | 2013-03-28Complexes of imidazole ligands
#7 | 2013-03-14Metal-enolate precursors for depositing metal-containing films
#8 | 2013-01-10Metal-Enolate Precursors For Depositing Metal-Containing Films
#9 | 2012-05-17Complexes of imidazole ligands
#10 | 2012-02-09Volatile imidazoles and group 2 imidazole based metal precursors
#11 | 2011-09-01Liquid composition containing aminoether for deposition of metal-containing films
#12 | 2011-06-16Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
#13 | 2011-06-09Liquid precursor for depositing group 4 metal containing films
#14 | 2011-05-26Volatile group 2 metal precursors
#15 | 2010-07-08High coordination sphere group 2 metal β-diketiminate precursors
#16 | 2010-05-27Volatile Group 2 Metal 1,3,5-Triazapentadienate Compounds
#17 | 2010-05-13Group 2 Metal Precursors For Deposition Of Group 2 Metal Oxide Films
#18 | 2010-02-18Materials for adhesion enhancement of copper film on diffusion barriers
#19 | 2009-05-07Copper precursors for thin film deposition
#20 | 2009-04-28Diffusion barrier layers and processes for depositing metal films thereupon by CVD or ALD processes
#21 | 2008-12-25Process for selectively depositing copper thin films on substrates with copper and ruthenium areas via vapor deposition
#22 | 2008-12-11Low temperature thermal conductive inks
#23 | 2008-11-06Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
#24 | 2008-10-16Metal Precursor Solutions For Chemical Vapor Deposition
#25 | 2008-06-10Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
#26 | 2008-03-27Methods For Depositing Metal Films On Diffusion Barrier Layers By CVD Processes
#27 | 2007-12-25Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes
#28 | 2007-08-23Electron attachment assisted formation of electrical conductors
#29 | 2007-08-16Methods for depositing metal films onto diffusion barrier layers by CVD or ALD processes
#30 | 2007-04-12Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides
#31 | 2006-07-06Volatile metal β-ketoiminate and metal β-diiminate complexes
#32 | 2006-04-25Volatile metal β-ketoiminate complexes
#33 | 2005-03-22Process for atomic layer deposition of metal films
#34 | 2005-01-25Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
#35 | 2005-01-04Copper CVD precursors with enhanced adhesion properties
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