Inventor profile of:

Min Li

City:

Dublin, California

Country:

United States

Published Applications:

112

Last publication date:

2024-11-21

Top Assignees for applications by Min Li

The entities that hold a legal rights for patent applications filed by inventor Li Min:

Recent patent applications by Li Min

Min Li from Dublin, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-11-21
US20240382610A1
Human necessities

NECTIN-4 ANTIBODIES AND CONJUGATES

#2 | 2024-11-14
US20240374746A1
Human necessities

SIRP-ALPHA ANTIBODIES AND CONJUGATES

#3 | 2024-01-11
US20240010701A1
Chemistry; metallurgy

COMBINATION THERAPIES FOR TREATING UROTHELIAL CARCINOMA

#4 | 2015-09-03
US20150249210A1
Electricity

TMR device with novel free layer structure

#5 | 2015-09-03
US20150248902A1
Physics

TMR device with novel free layer structure

#6 | 2015-06-18
US20150170836A1
Electricity

Method of manufacturing a CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer

#7 | 2014-05-22
US20140138783A1
Electricity

MR device with synthetic free layer structure

#8 | 2014-04-03
US20140091055A1
Physics

Method of making a PMR writer with graded side shield

#9 | 2013-04-11
US20130089675A1
Physics

CPP Device with Improved Current Confining Structure and Process

#10 | 2013-04-11
US20130088797A1
Physics

CPP device with improved current confining structure and process

#11 | 2013-01-03
US20130001189A1
Physics

TMR device with novel free layer structure

#12 | 2012-09-20
US20120235258A1
Electricity

TMR Device with Improved MgO Barrier

#13 | 2012-08-02
US20120193738A1
Physics

TMR device with low magnetorestriction free layer

#14 | 2012-05-24
US20120129007A1
Physics

Fabrication of a coercivity hard bias using FePt containing film

#15 | 2012-05-24
US20120128870A1
Electricity

TMR device with improved MgO barrier

#16 | 2012-05-24
US20120126905A1
Electricity

Assisting FGL oscillations with perpendicular anisotropy for MAMR

#17 | 2012-05-10
US20120113540A1
Physics

Modified field generation layer for microwave assisted magnetic recording

#18 | 2012-02-16
US20120038012A1
Physics

TMR device with novel free layer structure

#19 | 2012-01-12
US20120009337A1
Physics

Method of forming a spin valve structure with a composite spacer in a magnetic read head

#20 | 2011-12-29
US20110318608A1
Physics

TMR device with novel pinned layer

#21 | 2011-12-01
US20110293967A1
Physics

Multilayer structure with high perpendicular anisotropy for device applications

#22 | 2011-11-17
US20110279921A1
Physics

CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording

#23 | 2011-11-10
US20110273800A1
Physics

Perpendicular magnetic recording write head with milling defined track width

#24 | 2011-11-03
US20110268992A1
Physics

TMR or CPP structure with improved exchange properties

#25 | 2011-11-03
US20110265325A1
Electricity

CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer

#26 | 2011-10-27
US20110262775A1
Physics

Self-aligned full side shield PMR and method to make it

#27 | 2011-10-27
US20110261486A1
Physics

Perpendicular magnetic recording head with a bottom side shield

#28 | 2011-10-27
US20110260270A1
Physics

MR enhancing layer (MREL) for spintronic devices

#29 | 2011-10-20
US20110255196A1
Physics

PMR writer with graded side shield

#30 | 2011-09-08
US20110216447A1
Physics

Process of octagonal pole for microwave assisted magnetic recording (MAMR) writer

#31 | 2011-08-25
US20110205669A1
Physics

METHOD FOR MANUFACTURING MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS

#32 | 2011-08-18
US20110198314A1
Performing operations; transporting

Method to fabricate small dimension devices for magnetic recording applications

#33 | 2011-08-04
US20110188157A1
Physics

TMR device with novel free layer structure

#34 | 2011-07-28
US20110183158A1
Electricity

CPP structure with enhanced GMR ratio

#35 | 2011-07-28
US20110179635A1
Electricity

Method of manufacturing a CPP structure with enhanced GMR ratio

#36 | 2011-06-23
US20110146060A1
Physics

Method to make a perpendicular magnetic recording head with a side write shield

#37 | 2011-05-19
US20110117388A1
Physics

Multiple CCP layers in magnetic read head devices

#38 | 2011-04-28
US20110096443A1
Physics

MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application

#39 | 2010-12-30
US20100330395A1
Physics

Thin seeded Co/Ni multilayer film with perpendicular anisotropy for read head sensor stabilization

#40 | 2010-12-23
US20100320076A1
Electricity

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

#41 | 2010-12-02
US20100304185A1
Electricity

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

#42 | 2010-11-04
US20100276272A1
Chemistry; metallurgy

Method for fabricating a high coercivity hard bias structure for magnetoresistive sensor

#43 | 2010-07-15
US20100177449A1
Physics

TMR device with novel free layer structure

#44 | 2010-05-20
US20100123208A1
Electricity

MR device with synthetic free layer structure

#45 | 2010-05-13
US20100119874A1
Physics

Laminated high moment film for head applications

#46 | 2010-04-15
US20100092803A1
Physics

Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus

#47 | 2010-04-15
US20100091415A1
Physics

Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus

#48 | 2010-04-15
US20100091414A1
Physics

Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus

#49 | 2010-03-25
US20100073828A1
Physics

TMR device with novel free layer

#50 | 2010-03-25
US20100073827A1
Electricity

TMR device with novel free layer structure

#51 | 2010-02-18
US20100037453A1
Physics

Current confining layer for GMR device

#52 | 2010-01-28
US20100019333A1
Electricity

Low resistance tunneling magnetoresistive sensor with composite inner pinned layer

#53 | 2009-12-31
US20090323227A1
Physics

Ta/W film as heating device for dynamic fly height adjustment

#54 | 2009-12-24
US20090314632A1
Electricity

FCC-like trilayer AP2 structure for CPP GMR EM improvement

#55 | 2009-11-12
US20090279213A1
Physics

Stabilized shields for magnetic recording heads

#56 | 2009-10-29
US20090269617A1
Physics

Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers

#57 | 2009-10-15
US20090257151A1
Physics

Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications

#58 | 2009-10-08
US20090251829A1
Physics

Seed layer for TMR or CPP-GMR sensor

#59 | 2009-09-17
US20090229111A1
Physics

Two step annealing process for TMR device with amorphous free layer

#60 | 2009-08-06
US20090194833A1
Electricity

TMR device with Hf based seed layer

#61 | 2009-07-02
US20090165288A1
Electricity

Method of forming a high performance tunneling magnetoresistive (TMR) element

#62 | 2009-06-25
US20090161266A1
Electricity

TMR device with surfactant layer on top of CoFeB/CoFeinner pinned layer

#63 | 2009-05-14
US20090122450A1
Physics

TMR device with low magnetostriction free layer

#64 | 2009-05-14
US20090121710A1
Physics

Novel free layer design for TMR/CPP device

#65 | 2009-04-09
US20090091865A1
Electricity

CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer

#66 | 2009-03-05
US20090059441A1
Physics

CPP device with improved current confining structure and process

#67 | 2009-01-08
US20090009907A1
Physics

Laminated film for head applications

#68 | 2008-12-25
US20080316657A1
Physics

TMR or CPP structure with improved exchange properties

#69 | 2008-12-04
US20080299679A1
Electricity

Low resistance tunneling magnetoresistive sensor with composite inner pinned layer

#70 | 2008-12-04
US20080297945A1
Physics

Method to make a perpendicular magnetic recording head with a bottom side shield

#71 | 2008-11-13
US20080278864A1
Physics

CPP device with an enhanced dR/R ratio

#72 | 2008-10-23
US20080260943A1
Performing operations; transporting

Process for composite free layer in CPP GMR or TMR device

#73 | 2008-10-16
US20080253035A1
Physics

Method for manufacturing a self-aligned full side shield PMR

#74 | 2008-10-09
US20080246103A1
Electricity

MR device with surfactant layer within the free layer

#75 | 2008-09-11
US20080220156A1
Physics

CPP with elongated pinned layer

#76 | 2008-09-11
US20080219042A1
Physics

Magnetic memory cell

#77 | 2008-09-11
US20080218911A1
Physics

CPP with elongated pinned layer

#78 | 2008-08-14
US20080192388A1
Physics

Uniformity in CCP magnetic read head devices

#79 | 2008-07-31
US20080180865A1
Physics

CPP magnetic recording head with self-stabilizing vortex configuration

#80 | 2008-07-17
US20080171223A1
Electricity

TMR device with Hf based seed layer

#81 | 2008-05-15
US20080112089A1
Performing operations; transporting

Seed/AFM combination for CCP GMR device

#82 | 2008-04-24
US20080096051A1
Physics

Free layer for CPP GMR enhancement

#83 | 2008-04-15
US10953085
-

Method of forming a CPP magnetic recording head with a self-stabilizing vortex configuration

#84 | 2007-12-27
US20070297103A1
Physics

Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications

#85 | 2007-10-18
US20070243638A1
Electricity

Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R

#86 | 2007-08-16
US20070188936A1
Physics

Method to form a current confining path of a CPP GMR device

#87 | 2007-08-02
US20070177301A1
Physics

Perpendicular magnetic recording head with a side write shield

#88 | 2007-06-28
US20070146928A1
Physics

Ultra thin seed layer for CPP or TMR structure

#89 | 2007-05-17
US20070111332A1
Electricity

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

#90 | 2007-03-29
US20070070556A1
Electricity

FCC-like trilayer AP2 structure for CPP GMR EM improvement

#91 | 2007-03-01
US20070047159A1
Physics

Magnetoresistive spin valve sensor with tri-layer free layer

#92 | 2007-01-18
US20070015293A1
Electricity

Process of manufacturing a TMR device

#93 | 2007-01-18
US20070014054A1
Electricity

Method of manufacturing a CPP structure with enhanced GMR ratio

#94 | 2007-01-11
US20070008656A1
Physics

Method to increase CCP-CPP GMR output by thermoelectric cooling

#95 | 2006-09-21
US20060211198A1
Electricity

Structure and method to fabricate high performance MTJ devices for MRAM applications

#96 | 2006-09-21
US20060208296A1
Electricity

Structure and method to fabricate high performance MTJ devices for MRAM applications

#97 | 2006-07-27
US20060165881A1
Chemistry; metallurgy

Ta based bilayer seed for IrMn CPP spin valve

#98 | 2006-07-27
US20060164765A1
Physics

Ta based bilayer seed for IrMn CPP spin valve

#99 | 2006-07-06
US20060146452A1
Physics

CIP GMR enhanced by using inverse GMR material in AP2

#100 | 2006-06-22
US20060132989A1
Performing operations; transporting

Composite hard bias design with a soft magnetic underlayer for sensor applications

InventorID:

2836 ⎘