Inventor profile of:

MALCOLM J. BEVAN

City:

Santa Clara, California

Country:

United States

Published Applications:

23

Last publication date:

2025-07-24

Top Assignees for applications by MALCOLM J. BEVAN

The entities that hold a legal rights for patent applications filed by inventor BEVAN MALCOLM J.:

Recent patent applications by BEVAN MALCOLM J.

MALCOLM J. BEVAN from Santa Clara, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-07-24
US20250239445A1
Electricity

METHOD AND APPARATUS FOR SELECTIVE DEPOSITION OF DIELECTRIC FILMS

#2 | 2024-11-14
US20240379349A1
Electricity

TREATMENTS TO ENHANCE MATERIAL STRUCTURES

#3 | 2024-06-13
US20240192055A1
Physics

METHODS FOR CALIBRATING AN OPTICAL EMISSION SPECTROMETER

#4 | 2022-12-15
US20220399457A1
Electricity

Gate all around I/O engineering

#5 | 2022-09-22
US20220301920A1
Electricity

Film thickness uniformity improvement using edge ring and bias electrode geometry

#6 | 2022-06-09
US20220178747A1
Physics

Methods for calibrating an optical emission spectrometer

#7 | 2022-01-27
US20220028656A1
Electricity

Film thickness uniformity improvement using edge ring and bias electrode geometry

#8 | 2022-01-13
US20220013336A1
Electricity

PROCESS KIT WITH PROTECTIVE CERAMIC COATINGS FOR HYDROGEN AND NH3 PLASMA APPLICATION

#9 | 2021-07-01
US20210202702A1
Electricity

Method and apparatus for selective nitridation process

#10 | 2021-05-06
US20210134986A1
Electricity

Cap oxidation for FinFET formation

#11 | 2021-04-08
US20210104617A1
Electricity

Gate all around I/O engineering

#12 | 2021-02-11
US20210043448A1
Electricity

Method and Apparatus for Selective Deposition of Dielectric Films

#13 | 2020-11-05
US20200350157A1
Electricity

Treatments to enhance material structures

#14 | 2018-07-26
US20180211833A1
Electricity

Method And Apparatus For Selective Deposition Of Dielectric Films

#15 | 2014-11-20
US20140342543A1
Electricity

Method and apparatus for single step selective nitridation

#16 | 2014-10-09
US20140302686A1
Electricity

Method for conformal treatment of dielectric films using inductively coupled plasma

#17 | 2014-09-18
US20140273530A1
Electricity

Post-Deposition Treatment Methods For Silicon Nitride

#18 | 2013-02-14
US20130040444A1
Electricity

Method and apparatus for selective nitridation process

#19 | 2013-01-10
US20130012032A1
Electricity

NH3 containing plasma nitridation of a layer on a substrate

#20 | 2012-08-09
US20120202357A1
Electricity

In situ vapor phase surface activation of SiO

#21 | 2011-11-17
US20110281442A1
Electricity

Methods and apparatus for forming nitrogen-containing layers

#22 | 2011-09-08
US20110217834A1
Electricity

Method and apparatus for single step selective nitridation

#23 | 2010-09-30
US20100248497A1
Electricity

Methods and apparatus for forming nitrogen-containing layers

InventorID:

28788 ⎘