Inventor profile of:

JONGSEON AHN

City:

Suwon-si

Country:

South Korea

Published Applications:

16

Last publication date:

2026-06-18

Top Assignees for applications by JONGSEON AHN

The entities that hold a legal rights for patent applications filed by inventor AHN JONGSEON:

Recent patent applications by AHN JONGSEON

JONGSEON AHN from Suwon-si, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-18
US20260171125A1
Physics

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

#2 | 2025-11-06
US20250344388A1
Electricity

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

#3 | 2025-03-13
US20250089252A1
Electricity

SEMICONDUCTOR DEVICES

#4 | 2025-01-09
US20250017018A1
Electricity

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

#5 | 2024-08-15
US20240276719A1
Electricity

VERTICAL MEMORY DEVICE

#6 | 2024-04-18
US20240130123A1
Electricity

SEMICONDUCTOR DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME

#7 | 2024-03-14
US20240090219A1
Electricity

VERTICAL MEMORY DEVICE

#8 | 2024-02-29
US20240074193A1
Electricity

SEMICONDUCTOR DEVICE

#9 | 2024-02-29
US20240074192A1
Electricity

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

#10 | 2024-02-01
US20240038659A1
Electricity

SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME

#11 | 2023-11-23
US20230380164A1
Electricity

SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME

#12 | 2021-12-09
US20210384220A1
Electricity

Three-dimensional semiconductor memory devices having a source structure that overlaps a buried insulating layer

#13 | 2021-04-01
US20210098483A1
Electricity

Semiconductor devices

#14 | 2021-03-25
US20210091093A1
Electricity

Three-dimensional memory device including a string selection line gate electrode having a silicide layer

#15 | 2020-12-24
US20200402997A1
Electricity

Semiconductor device with reduced vertical height

#16 | 2020-11-05
US20200350330A1
Electricity

Three-dimensional semiconductor memory devices having source structure overlaps buried insulating layer

InventorID:

2899774 ⎘