Inventor profile of:

JAERYONG SIM

City:

Suwon-si

Country:

South Korea

Published Applications:

15

Last publication date:

2026-03-26

Top Assignees for applications by JAERYONG SIM

The entities that hold a legal rights for patent applications filed by inventor SIM JAERYONG:

Recent patent applications by SIM JAERYONG

JAERYONG SIM from Suwon-si, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-03-26
US20260089952A1
Electricity

NON-VOLATILE MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND MEMORY SYSTEM INCLUDING THE SAME

#2 | 2025-11-20
US20250359047A1
Electricity

SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME

#3 | 2025-11-13
US20250351351A1
Electricity

SEMICONDUCTOR MEMORY DEVICE

#4 | 2025-02-13
US20250056808A1
Electricity

SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME

#5 | 2024-10-24
US20240357825A1
Electricity

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM

#6 | 2023-08-03
US20230247835A1
Electricity

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME

#7 | 2022-12-22
US20220406801A1
Electricity

SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME

#8 | 2022-10-13
US20220328511A1
Electricity

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

#9 | 2022-05-12
US20220149060A1
Electricity

Semiconductor device and method of manufacturing the same

#10 | 2022-03-31
US20220102369A1
Electricity

Semiconductor device having dummy structures in a peripheral region and data storage system including the same

#11 | 2022-02-17
US20220052069A1
Electricity

Integrated circuit device

#12 | 2022-02-10
US20220045083A1
Electricity

Semiconductor device and electronic system

#13 | 2021-12-09
US20210384220A1
Electricity

Three-dimensional semiconductor memory devices having a source structure that overlaps a buried insulating layer

#14 | 2021-04-01
US20210098483A1
Electricity

Semiconductor devices

#15 | 2020-11-05
US20200350330A1
Electricity

Three-dimensional semiconductor memory devices having source structure overlaps buried insulating layer

InventorID:

2899775 ⎘