Cary, North Carolina
United States
47
2025-08-28
The entities that hold a legal rights for patent applications filed by inventor Bothe Kyle:
Kyle Bothe from Cary, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Transistor Design Reducing Use of Gold
#2 | 2025-06-05MULTI-GATE SWITCH FIELD EFFECT TRANSISTOR
#3 | 2025-05-01GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS CONFIGURED WITH A LOW RESISTANCE CONTACT LAYER FOR SOURCE AND/OR DRAIN CONTACTS AND PROCESS FOR IMPLEMENTING THE SAME
#4 | 2025-05-01GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS CONFIGURED WITH A LOW RESISTANCE CONTACT LAYER FOR SOURCE AND/OR DRAIN CONTACTS AND PROCESS FOR IMPLEMENTING THE SAME
#5 | 2025-03-20Corrosion Resistant Metal Structures for Wide Bandgap Semiconductor Devices
#6 | 2024-12-26Implantation for Isolated Channel Structures in Group III-Nitride Semiconductor Devices
#7 | 2024-12-26INTEGRATED RESISTORS WITH INCREASED SHEET RESISTANCE FOR RF APPLICATIONS AND METHODS OF FABRICATING THE SAME
#8 | 2024-12-26THERMALLY CONDUCTIVE INTERPOSER, A DEVICE IMPLEMENTING A THERMALLY CONDUCTIVE INTERPOSER, AND PROCESSES FOR IMPLEMENTING THE SAME
#9 | 2024-12-26Topside Cooling for Semiconductor Device
#10 | 2024-12-19Low Contact Resistance in Semiconductor Devices with Implanted Regions
#11 | 2024-09-19METAL STACK WITH PHONON SCATTERING LAYER THAT FORMS A NON-OHMIC CONTACT TO A SEMICONDUCTOR LAYER
#12 | 2024-09-12Field Reducing Structures for Nitrogen-Polar Group III-Nitride Semiconductor Devices
#13 | 2024-08-29Nitrogen-Polar Group III-Nitride Semiconductor Device with Isolation Implant Regions
#14 | 2024-08-29Electric Field Modification for Nitrogen-Polar Group III-Nitride Semiconductor Devices
#15 | 2024-08-15Vias for Semiconductor Devices Formed from Multiple Etching
#16 | 2024-08-08Semiconductor Device Having Semiconductor Structure with Polarity Inverting Layer
#17 | 2024-06-13TRANSISTOR DEVICES INCLUDING SELF-ALIGNED OHMIC CONTACTS AND CONTACT REGIONS AND RELATED FABRICATION METHODS
#18 | 2024-05-30High Frequency, High Temperature Transistor Devices
#19 | 2024-05-16FIELD EFFECT TRANSISTOR INCLUDING FIELD PLATES
#20 | 2024-04-11Implanted Regions for Semiconductor Structures with Deep Buried Layers
#21 | 2024-03-28Barrier Structure for Sub-100 Nanometer Gate Length Devices
#22 | 2024-03-28Barrier Structure for Dispersion Reduction in Transistor Devices
#23 | 2024-02-29TRANSISTOR DIE INCLUDING MATCHING CIRCUIT
#24 | 2024-02-29ELECTRONIC DEVICES WITH REDUCED OHMIC TO OHMIC DIMENSIONS
#25 | 2024-02-22HIGH ELECTRON MOBILITY TRANSISTORS HAVING REDUCED DRAIN CURRENT DRIFT AND METHODS OF FABRICATING SUCH DEVICES
#26 | 2023-12-07METHOD FOR REDUCING PARASITIC CAPACITANCE AND INCREASING PEAK TRANSCONDUCTANCE WHILE MAINTAINING ON-STATE RESISTANCE AND RELATED DEVICES
#27 | 2023-12-07PLASMA-BASED BARRIER LAYER REMOVAL METHOD FOR INCREASING PEAK TRANSCONDUCTANCE WHILE MAINTAINING ON-STATE RESISTANCE AND RELATED DEVICES
#28 | 2023-08-17Radio frequency transistor amplifiers having self-aligned double implanted source/drain regions for improved on-resistance performance and related methods
#29 | 2023-04-27Transistor with ohmic contacts
#30 | 2023-03-16Semiconductor device incorporating a substrate recess
#31 | 2023-02-02Encapsulation stack for improved humidity performance and related fabrication methods
#32 | 2023-02-02INTERCONNECT METAL OPENINGS THROUGH DIELECTRIC FILMS
#33 | 2022-11-24TRANSISTORS INCLUDING SEMICONDUCTOR SURFACE MODIFICATION AND RELATED FABRICATION METHODS
#34 | 2022-11-24High electron mobility transistors having improved performance
#35 | 2022-11-24Methods of manufacturing high electron mobility transistors having a modified interface region
#36 | 2022-10-13FIELD EFFECT TRANSISTOR WITH STACKED UNIT SUBCELL STRUCTURE
#37 | 2022-09-22Field effect transistor with multiple stepped field plate
#38 | 2022-07-14Radio frequency transistor amplifiers having widened and/or asymmetric source/drain regions for improved on-resistance performance
#39 | 2022-04-28Field effect transistor with enhanced reliability
#40 | 2022-04-28Field effect transistor with at least partially recessed field plate
#41 | 2022-04-28Field effect transistor with source-connected field plate
#42 | 2021-11-18Group III-Nitride High-Electron Mobility Transistors Configured with Recessed Source and/or Drain Contacts for Reduced On State Resistance and Process for Implementing the Same
#43 | 2021-06-10High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability
#44 | 2021-01-28Packaged electronic circuits having moisture protection encapsulation and methods of forming same
#45 | 2020-12-17High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability
#46 | 2020-12-17High electron mobility transistors having improved contact spacing and/or improved contact vias
#47 | 2019-10-24Packaged electronic circuits having moisture protection encapsulation and methods of forming same
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