Inventor profile of:

Michael P. Violette

City:

Boise, Idaho

Country:

United States

Published Applications:

68

Last publication date:

2025-11-06

Top Assignees for applications by Michael P. Violette

The entities that hold a legal rights for patent applications filed by inventor Violette Michael P.:

Recent patent applications by Violette Michael P.

Michael P. Violette from Boise, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-11-06
US20250344512A1
Electricity

MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES AND INTEGRATED CIRCUIT DEVICES

#2 | 2025-11-06
US20250343083A1
Electricity

MEMORY DEVICE INCLUDING CIRCUITRY UNDER BOND PADS

#3 | 2024-06-06
US20240186313A1
Electricity

CAPACITOR STRUCTURES

#4 | 2023-01-05
US20230005799A1
Electricity

MEMORY DEVICE INCLUDING CIRCUITRY UNDER BOND PADS

#5 | 2022-08-25
US20220271224A1
Electricity

RESISTIVE MEMORY ARCHITECTURES WITH MULTIPLE MEMORY CELLS PER ACCESS DEVICE

#6 | 2021-06-24
US20210193916A1
Electricity

PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE

#7 | 2021-02-11
US20210043525A1
Electricity

Memory device including circuitry under bond pads

#8 | 2021-01-07
US20210005811A1
Electricity

Resistive memory architectures with multiple memory cells per access device

#9 | 2020-02-06
US20200044151A1
Electricity

Resistive memory architectures with multiple memory cells per access device

#10 | 2019-06-06
US20190173007A1
Electricity

Apparatuses including memory devices and related electronic systems

#11 | 2019-01-24
US20190027685A1
Electricity

Buried low-resistance metal word lines for cross-point variable-resistance material memories

#12 | 2019-01-24
US20190027684A1
Electricity

Buried low-resistance metal word lines for cross-point variable-resistance material memories

#13 | 2018-12-20
US20180366453A1
Electricity

Method and apparatus for reducing capacitance of input/output pins of memory device

#14 | 2018-11-22
US20180337330A1
Electricity

Resistive memory architectures with multiple memory cells per access device

#15 | 2018-05-17
US20180138404A1
Electricity

Methods of operating memory devices and electronic systems

#16 | 2018-05-17
US20180138399A1
Electricity

Phase change memory cell with constriction structure

#17 | 2018-05-17
US20180138398A1
Electricity

Phase change memory cell with constriction structure

#18 | 2017-09-14
US20170263865A1
Electricity

Buried low-resistance metal word lines for cross-point variable-resistance material memories

#19 | 2017-04-13
US20170104156A1
Electricity

Methods of forming memory devices having electrodes comprising nanowires

#20 | 2017-03-09
US20170069838A1
Electricity

Resistive memory architectures with multiple memory cells per access device

#21 | 2017-01-26
US20170025517A1
Electricity

Thyristor random access memory device and method

#22 | 2016-06-30
US20160190438A1
Electricity

Phase change memory cell with constriction structure

#23 | 2015-12-31
US20150380647A1
Electricity

Buried low-resistance metal word lines for cross-point variable-resistance material memories

#24 | 2015-11-12
US20150325645A1
Electricity

Method providing an epitaxial growth having a reduction in defects and resulting structure

#25 | 2015-10-22
US20150303239A1
Electricity

Memory device having self-aligned cell structure

#26 | 2015-06-25
US20150179931A1
Electricity

Resistive memory architectures with multiple memory cells per access device

#27 | 2015-04-23
US20150108600A1
Electricity

Method providing an epitaxial growth having a reduction in defects and resulting structure

#28 | 2015-03-05
US20150060754A1
Electricity

Memory devices having electrodes comprising nanowires

#29 | 2015-02-19
US20150050795A1
Electricity

Diode for variable-resistance material memories, processes of forming same, and methods of using same

#30 | 2014-12-11
US20140363947A1
Electricity

Resistive memory cell fabrication methods and devices

#31 | 2014-11-27
US20140346425A1
Electricity

Phase change memory cell with constriction structure

#32 | 2014-02-20
US20140051214A1
Electricity

Floating body field-effect transistors, and methods of forming floating body field-effect transistors

#33 | 2014-01-16
US20140015001A1
Electricity

Thyristor random access memory device and method

#34 | 2013-11-28
US20130313510A1
Electricity

Memory device having self-aligned cell structure

#35 | 2013-09-05
US20130230959A1
Electricity

Method of forming a field effect transistor having source/drain material over insulative material

#36 | 2013-06-20
US20130153849A1
Electricity

Non-volatile memory with resistive access component

#37 | 2012-10-11
US20120256153A1
Electricity

Diode for variable-resistance material memories, processes of forming same, and methods of using same

#38 | 2011-12-29
US20110316042A1
Electricity

Thyristor random access memory device and method

#39 | 2011-09-29
US20110233504A1
Electricity

Non-volatile memory with resistive access component

#40 | 2011-08-11
US20110193165A1
Electricity

Floating body field-effect transistors, and methods of forming floating body field-effect transistors

#41 | 2011-03-31
US20110076827A1
Electricity

Memory devices having electrodes comprising nanowires, systems including same and methods of forming same

#42 | 2011-03-17
US20110065235A1
Electricity

Phase change memory cell with constriction structure

#43 | 2011-03-03
US20110051512A1
Physics

3D memory devices decoding and routing systems and methods

#44 | 2010-08-12
US20100200830A1
Electricity

Memory device having self-aligned cell structure

#45 | 2009-09-17
US20090231911A1
Electricity

Phase change memory cell with constriction structure

#46 | 2009-09-17
US20090231910A1
Electricity

Non-volatile memory with resistive access component

#47 | 2009-07-16
US20090179187A1
Electricity

3-D and 3-D schottky diode for cross-point, variable-resistance material memories, processes of forming same, and methods of using same

#48 | 2009-04-30
US20090108292A1
Electricity

Floating body field-effect transistors, and methods of forming floating body field-effect transistors

#49 | 2009-03-19
US20090072341A1
Electricity

Buried low-resistance metal word lines for cross-point variable-resistance material memories

#50 | 2008-12-18
US20080311719A1
Electricity

Method of forming a field effect transistor

#51 | 2008-10-09
US20080247226A1
Electricity

Memory devices having electrodes comprising nanowires, systems including same and methods of forming same

#52 | 2007-05-10
US20070105323A1
Electricity

Method of forming a field effect transistor

#53 | 2006-11-30
US20060270208A1
Electricity

Methods of making semiconductor fuses

#54 | 2006-11-16
US20060258107A1
Electricity

Methods of forming field effect transistors and methods of forming field effect transistor gates and gate lines

#55 | 2006-09-19
US10838587
-

Methods of making semiconductor fuses

#56 | 2006-07-04
US10222326
-

Methods of forming a field effect transistor having source/drain material over insulative material

#57 | 2005-12-27
US10420176
-

Methods for fabricating fuses for use in semiconductor devices and semiconductor devices including such fuses

#58 | 2005-08-09
US10620054
-

Semiconductor fuses and semiconductor devices containing the same

#59 | 2005-07-12
US8508117
-

Local ground and VCC connection in an SRAM cell

#60 | 2005-06-16
US20050130380A1
Physics

Semiconductor device structures including metal silicide interconnects and dielectric layers at substantially the same fabrication level

#61 | 2005-05-19
US20050106795A1
Electricity

Method of forming a field effect transistor

#62 | 2005-05-12
US20050101075A1
Electricity

Methods of forming field effect transistor gate lines

#63 | 2005-05-05
US20050095767A1
Electricity

Method of forming field effect transistors

#64 | 2005-05-05
US20050095756A1
Electricity

Method of forming a field effect transistor

#65 | 2005-04-12
US10322252
-

Fuse for use in a semiconductor device, and semiconductor devices including the fuse

#66 | 2005-02-22
US9795746
-

Semiconductor device structures including metal silicide interconnect structures that extend at least partially over transistor gate structures and methods for making the same

#67 | 2005-01-18
US10000479
-

Local interconnect structure for integrated circuit devices, source structure for the same, and method for fabricating the same

#68 | 2005-01-11
US10801334
-

Static random access memory cells

InventorID:

294121 ⎘