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Inventor profile of:

Frederic MAZEN

City:

Grenoble

Country:

France

Published Applications:

Last publication date:

2024-01-25

Top Assignees for applications by Frederic MAZEN

The entities that hold a legal rights for patent applications filed by inventor MAZEN Frederic:

Commissariat A L'Energie Atomique Et Aux Energies Alternatives 5 Paris, France
Commissariat A L'Energie Atomique 4 Paris, France
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES 2 Paris, France
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES 1 Paris, France
SOITEC 1 Bernin, France
Comminssariat A L"energie Atomique 1 Paris, France
S.O.I Tec Silicon on Insulator Technologies 1 Bernin, France
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 1 Paris, France
Commissariat à l'Énergie Atomique et aux Énergies Alternatives 1 Paris, France
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT 1 Paris, France
Commissariat à I'Énergie Atomique et aux Énergies Alternatives 1 Paris, France
COMMISSARIATE A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 1 Paris, France

Recent patent applications by MAZEN Frederic

Frederic MAZEN from Grenoble, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-01-25

US20240030060A1

Electricity

METHOD FOR PREPARING A THIN LAYER

#2 | 2022-05-19

US20220157612A1

Electricity

SEMICONDUCTOR SUBSTRATE POLISHING METHOD

#3 | 2021-09-16

US20210287933A1

Electricity

Method for suspending a thin layer on a cavity with a stiffening effect obtained by pressurizing the cavity by implanted species

#4 | 2020-07-09

US20200219762A1

Electricity

Method for layer transfer with localised reduction of a capacity to initiate a fracture

#5 | 2020-07-09

US20200219719A1

Electricity

Healing method before transfer of a semiconducting layer

#6 | 2015-07-09

US20150194550A1

Electricity

Detachment of a self-supporting layer of silicon <100>

#7 | 2015-02-26

US20150055122A1

Physics

System for measuring a spacing zone in a substrate

#8 | 2013-06-20

US20130156989A1

Performing operations; transporting

Manufacturing a flexible structure by transfers of layers

#9 | 2011-06-02

US20110129988A1

Electricity

Method of making multiple implantations in a substrate

#10 | 2010-08-05

US20100197052A1

Electricity

Ion implantation process characterization method

#11 | 2010-02-04

US20100025228A1

Electricity

Method for preparing thin GaN layers by implantation and recycling of a starting substrate

#12 | 2009-03-19

US20090072245A1

Electricity

Method of producing a light-emitting diode comprising a nanostructured PN junction and diode thus obtained

#13 | 2007-05-10

US20070104888A1

Chemistry; metallurgy

Method for the organised growth of nanostructures

#14 | 2005-09-20

US10718109

Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric material

InventorID:

299168 ⎘