Inventor profile of:

Jae-Hee Oh

City:

Gyeonggi-do

Country:

South Korea

Published Applications:

15

Last publication date:

2012-01-12

Top Assignees for applications by Jae-Hee Oh

The entities that hold a legal rights for patent applications filed by inventor Oh Jae-Hee:

Recent patent applications by Oh Jae-Hee

Jae-Hee Oh from Gyeonggi-do, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-01-12
US20120009755A1
Electricity

Semiconductor device and method of fabricating the same

#2 | 2010-05-06
US20100108971A1
Electricity

Methods of forming integrated circuit devices having vertical semiconductor interconnects and diodes therein and devices formed thereby

#3 | 2010-02-25
US20100044667A1
Physics

Semiconductor devices having a planarized insulating layer

#4 | 2009-12-10
US20090302297A1
Electricity

Phase change memory devices and their methods of fabrication

#5 | 2009-09-17
US20090230376A1
Electricity

Resistive memory device

#6 | 2009-07-02
US20090166600A1
Electricity

Integrated circuit devices having a stress buffer spacer and methods of fabricating the same

#7 | 2009-01-29
US20090026439A1
Electricity

Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other

#8 | 2008-11-13
US20080280390A1
Electricity

METHOD OF FABRICATING SEMICONDUCTOR MEMORY DEVICE HAVING SELF-ALIGNED ELECTRODE, RELATED DEVICE AND ELECTRONIC SYSTEM HAVING THE SAME

#9 | 2008-05-15
US20080111120A1
Electricity

Non-volatile memory devices having cell diodes

#10 | 2008-04-03
US20080078984A1
Electricity

Semiconductor device and method of fabricating the same

#11 | 2007-04-12
US20070080421A1
Electricity

Memory device having highly integrated cell structure and method of its fabrication

#12 | 2007-03-15
US20070059934A1
Electricity

Methods of forming fine patterns, and methods of forming trench isolation layers using the same

#13 | 2006-12-21
US20060284237A1
Electricity

Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each other

#14 | 2006-10-26
US20060237756A1
Electricity

Phase change memory devices and their methods of fabrication

#15 | 2006-01-19
US20060011959A1
Physics

Semiconductor devices having a planarized insulating layer and methods of forming the same

InventorID:

3071676 ⎘