Cary, North Carolina
United States
21
2020-05-21
The entities that hold a legal rights for patent applications filed by inventor Powell Adrian:
Adrian Powell from Cary, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Stabilized, high-doped silicon carbide
#2 | 2018-07-05Stabilized, high-doped silicon carbide
#3 | 2014-10-02Low micropipe 100 mm silicon carbide wafer
#4 | 2013-06-27Low 1C screw dislocation 3 inch silicon carbide wafer
#5 | 2011-12-01Method of producing high quality silicon carbide crystal in a seeded growth system
#6 | 2011-02-03One hundred millimeter single crystal silicon carbide wafer
#7 | 2008-10-02Low micropipe 100 mm silicon carbide wafer
#8 | 2008-07-17Low 1C screw dislocation 3 inch silicon carbide wafer
#9 | 2008-01-10One hundred millimeter SiC crystal grown on off-axis seed
#10 | 2007-10-18One hundred millimeter single crystal silicon carbide wafer
#11 | 2007-10-18Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface
#12 | 2007-09-13Low micropipe 100 mm silicon carbide wafer
#13 | 2007-07-12Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
#14 | 2006-10-12Three inch silicon carbide wafer with low warp, bow, and TTV
#15 | 2006-09-28Seeded single crystal silicon carbide growth and resulting crystals
#16 | 2006-06-08Process for producing high quality large size silicon carbide crystals
#17 | 2006-05-18Reduction of subsurface damage in the production of bulk SiC crystals
#18 | 2006-04-13Low basal plane dislocation bulk grown SiC wafers
#19 | 2006-04-06Low 1c screw dislocation 3 inch silicon carbide wafer
#20 | 2006-02-16Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
#21 | 2005-06-16One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
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