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Inventor profile of:

Jorge Adrian Kittl

City:

Waterloo

Country:

Belgium

Published Applications:

Last publication date:

2012-01-26

Top Assignees for applications by Jorge Adrian Kittl

The entities that hold a legal rights for patent applications filed by inventor Kittl Jorge Adrian:

TEXAS INSTRUMENTS, INC. 6 Dallas, TX United States
Interuniversitair Microelektronica Centrum (IMEC) 6 Leuven, Belgium
TEXAS INSTRUMENTS INCORPORATED 5 Dallas, TX United States
IMEC 4 Leuven, Belgium
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 2 Hsinchu, Taiwan
National University of Singapore (NUS) 1 Singapore, Singapore
KONINKLIJKE PHILIPS ELECTRONICS 1 Eindhoven, Netherlands
Interuniversitair Microlektronica Centrum (IMEC) 1 Leuven, Belgium
Interuniversitair MicroelektronicaCentrum (IMEC) 1 Leuven, Belgium
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM 1 Leuven, Belgium
Interuniversitair Microelektronica Centrum vzw (IMEC) 1 Leuven, Belgium
Koninklijke Phillips Electronics 1 Eindhoven, Netherlands
Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC") 1 Hsin-Chu, Taiwan

Recent patent applications by Kittl Jorge Adrian

Jorge Adrian Kittl from Waterloo, BE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-01-26

US20120018784A1

Electricity

Method for forming a nickelsilicide FUSI gate

#2 | 2009-01-22

US20090020821A1

Electricity

Dual workfunction semiconductor device

#3 | 2009-01-01

US20090001483A1

Electricity

Method for forming a nickelsilicide FUSI gate

#4 | 2008-11-27

US20080293193A1

Electricity

USE OF LOW TEMPERATURE ANNEAL TO PROVIDE LOW DEFECT GATE FULL SILICIDATION

#5 | 2008-11-27

US20080290428A1

Electricity

USE OF ALLOYS TO PROVIDE LOW DEFECT GATE FULL SILICIDATION

#6 | 2008-11-27

US20080290427A1

Electricity

Use of dopants to provide low defect gate full silicidation

#7 | 2008-06-12

US20080136030A1

Electricity

Semiconductor device comprising a doped metal comprising main electrode

#8 | 2008-05-08

US20080105933A1

Electricity

Semiconductor device with reduced diffusion of workfunction modulating element

#9 | 2007-04-12

US20070080408A1

Electricity

Method for forming a silicidated contact

#10 | 2007-01-18

US20070015334A1

Electricity

Method for forming a fully silicided gate and devices obtained thereof

#11 | 2006-12-21

US20060286802A1

Electricity

Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET

#12 | 2006-11-23

US20060263961A1

Electricity

Method for Forming Dual Fully Silicided Gates and Devices with Dual Fully Silicided Gates

#13 | 2006-11-16

US20060258156A1

Electricity

Method for forming fully silicided gates and devices obtained thereof

InventorID:

3080082 ⎘