Dresden
Germany
12
2012-02-02
The entities that hold a legal rights for patent applications filed by inventor Burbach Gert:
Gert Burbach from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materials
#2 | 2009-09-03TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING AN PN JUNCTION BASED ON SILICON/GERMANIUM MATERIAL
#3 | 2007-11-01Semiconductor device having stressed etch stop layers of different intrinsic stress in combination with PN junctions of different design in different device regions
#4 | 2007-09-06METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING TRANSISTOR ELEMENTS WITH DIFFERENTLY STRESSED CHANNEL REGIONS
#5 | 2007-08-30Technique for forming a strained transistor by a late amorphization and disposable spacers
#6 | 2006-08-31Gate structure and a transistor having asymmetric spacer elements and methods of forming the same
#7 | 2006-03-02Method of forming a semiconductor structure comprising transistor elements with differently stressed channel regions
#8 | 2006-02-28Simultaneous formation of device and backside contacts on wafers having a buried insulator layer
#9 | 2006-02-02Technique for evaluating local electrical characteristics in semiconductor devices
#10 | 2005-09-13Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding
#11 | 2005-06-14Diode structure for SOI circuits
#12 | 2005-05-12Method of forming local interconnect barrier layers
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