Anthony Mowry

Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions

Temperature monitoring in a semiconductor device by using a PN junction based on silicon/germanium materials

Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation

Heat dissipation in temperature critical device areas of semiconductor devices by heat pipes connecting to the substrate backside

Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions

Cold temperature control in a semiconductor device

In situ formed drain and source regions in a silicon/germanium containing transistor device

Increasing stress transfer efficiency in a transistor by reducing spacer width during the drain/source implantation sequence

Method for creating tensile strain by applying stress memorization techniques at close proximity to the gate electrode

Reduction of memory instability by local adaptation of re-crystallization conditions in a cache area of a semiconductor device

TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING AN PN JUNCTION BASED ON SILICON/GERMANIUM MATERIAL

Method for selectively forming strain in a transistor by a stress memorization technique without adding additional lithography steps

Method of forming an interlayer dielectric material having different removal rates during CMP

Temperature monitoring in a semiconductor device by thermocouples distributed in the contact structure

Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions

Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation