Inventor profile of:

Ryu Hirota

City:

Hyogo

Country:

Japan

Published Applications:

21

Last publication date:

2012-02-16

Top Assignees for applications by Ryu Hirota

The entities that hold a legal rights for patent applications filed by inventor Hirota Ryu:

Recent patent applications by Hirota Ryu

Ryu Hirota from Hyogo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-02-16
US20120040511A1
Chemistry; metallurgy

AlInGaN mixture crystal substrate, method of growing same and method of producing same

#2 | 2009-12-24
US20090315150A1
Chemistry; metallurgy

III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device

#3 | 2009-08-27
US20090215248A1
Chemistry; metallurgy

AlInGaN mixture crystal substrate, method of growing same and method of producing same

#4 | 2009-06-18
US20090155989A1
Chemistry; metallurgy

Nitride semiconductor substrate and method of producing same

#5 | 2009-02-05
US20090032907A1
Chemistry; metallurgy

Method for Producing GaxIn1-xN(0) Crystal Gaxin1-xn(0 #6 | 2008-11-20

Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device

#7 | 2008-08-28
US20080202409A1
Chemistry; metallurgy

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

#8 | 2008-01-31
US20080022921A1
Chemistry; metallurgy

Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device

#9 | 2008-01-10
US20080006201A1
Chemistry; metallurgy

Method of growing gallium nitride crystal

#10 | 2007-12-27
US20070296061A1
Chemistry; metallurgy

Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device

#11 | 2007-12-06
US20070280872A1
Chemistry; metallurgy

Method of growing gallium nitride crystal and gallium nitride substrate

#12 | 2006-12-07
US20060273343A1
Chemistry; metallurgy

A1InGaN mixture crystal substrate, method of growing same and method of producing same

#13 | 2006-12-07
US20060272572A1
Chemistry; metallurgy

Nitride semiconductor substrate and method of producing same

#14 | 2006-09-28
US20060213429A1
Chemistry; metallurgy

Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate

#15 | 2006-09-26
US10700495
-

Single crystal GaN substrate semiconductor device

#16 | 2006-08-08
US10265719
-

Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate

#17 | 2006-01-19
US20060012011A1
Chemistry; metallurgy

Mehtod for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method

#18 | 2005-08-25
US20050183658A1
Chemistry; metallurgy

AlInGaN mixture crystal substrate, method of growing AlInGaN mixture crystal substrate and method of producing AlInGaN mixture crystal substrate

#19 | 2005-07-28
US20050161697A1
Chemistry; metallurgy

AlInGaN mixture crystal substrate

#20 | 2005-05-05
US20050092234A1
Chemistry; metallurgy

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

#21 | 2005-04-14
US20050076830A1
Chemistry; metallurgy

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

InventorID:

3100159 ⎘