Patents-Review.com
🔗 Permalink
Assignee profile:

Yusuke MORI

City:

Osaka

Country:

Japan

Published Applications:

13

Last publication date:

2012-06-07

Patent Grants:

12

Last grant date:

2013-10-29

Top Inventors for applications by Yusuke MORI

These are the the leading inventors for applications assigned to Yusuke MORI:

Recent patent applications by Yusuke MORI

Yusuke MORI based in Osaka, JP has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2012-06-07 ✅ Patent 8,568,532 granted on 2013-10-29
US20120137961A1
Chemistry; metallurgy

Method for growing single crystal of group III metal nitride and reaction vessel for use in same

 #2 | 2008-11-20 ✅ Patent 7,905,958 granted on 2011-03-15
US20080283968A1
Chemistry; metallurgy

Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device

 #3 | 2008-09-18 ✅ Patent 7,708,833 granted on 2010-05-04
US20080223288A1
Chemistry; metallurgy

Crystal growing apparatus

 #4 | 2008-09-04 ✅ Patent 7,754,012 granted on 2010-07-13
US20080213158A1
Chemistry; metallurgy

Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride

 #5 | 2008-01-31 ✅ Patent 8,038,794 granted on 2011-10-18
US20080022921A1
Chemistry; metallurgy

Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device

 #6 | 2007-12-18 ✅ Patent 7,309,534 granted on 2007-12-18
US10856467
-

Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same

 #7 | 2007-11-29 ✅ Patent 7,794,539 granted on 2010-09-14
US20070272941A1
Chemistry; metallurgy

Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby

 #8 | 2007-09-20 ✅ Patent 7,435,295 granted on 2008-10-14
US20070215035A1
Chemistry; metallurgy

Method for producing compound single crystal and production apparatus for use therein

 #9 | 2007-08-23
US20070196942A1
Chemistry; metallurgy

Method for producing group III nitride crystal, group III nitride crystal obtained by such method, and group III nitride substrate using the same

 #10 | 2007-07-12 ✅ Patent 7,381,268 granted on 2008-06-03
US20070157876A1
Chemistry; metallurgy

Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride

 #11 | 2007-02-13 ✅ Patent 7,176,115 granted on 2007-02-13
US10804610
-

Method of manufacturing Group III nitride substrate and semiconductor device

 #12 | 2005-03-03 ✅ Patent 7,288,152 granted on 2007-10-30
US20050048686A1
Electricity

Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same

 #13 | 2005-01-20 ✅ Patent 7,255,742 granted on 2007-08-14
US20050011432A1
Chemistry; metallurgy

Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device

Also check out Yusuke Mori's (Osaka, Japan) applicant profile with 5 patent applications submitted.

AssigneeID:

270092 ⎘