Inventor profile of:

STEVEN W. LONGCOR

City:

MOUNTAIN VIEW, California

Country:

United States

Published Applications:

45

Last publication date:

2012-04-12

Top Assignees for applications by STEVEN W. LONGCOR

The entities that hold a legal rights for patent applications filed by inventor LONGCOR STEVEN W.:

Recent patent applications by LONGCOR STEVEN W.

STEVEN W. LONGCOR from MOUNTAIN VIEW, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-04-12
US20120087174A1
Electricity

Two Terminal Re Writeable Non Volatile Ion Transport Memory Device

#2 | 2012-03-15
US20120064691A1
Electricity

Method for fabricating multi-resistive state memory devices

#3 | 2011-12-29
US20110315948A1
Mechanical engineering

Memory device using ion implant isolated conductive metal oxide

#4 | 2011-12-29
US20110315943A1
Mechanical engineering

Memory Device Using A Dual Layer Conductive Metal Oxide Structure

#5 | 2011-08-25
US20110204019A1
Electricity

Method of making a planar electrode

#6 | 2011-08-04
US20110186803A1
Electricity

Multi-resistive state memory device with conductive oxide electrodes

#7 | 2010-11-16
US12660424
-

Method of making a planar electrode

#8 | 2010-06-24
US20100159641A1
Mechanical engineering

Memory cell formation using ion implant isolated conductive metal oxide

#9 | 2010-06-24
US20100157657A1
Electricity

Multi-resistive state memory device with conductive oxide electrodes

#10 | 2009-02-19
US20090045390A1
Electricity

Multi-resistive state memory device with conductive oxide electrodes

#11 | 2009-01-15
US20090016094A1
Electricity

Selection device for re-writable memory

#12 | 2008-11-27
US20080293196A1
Electricity

Method for fabricating multi-resistive state memory devices

#13 | 2008-07-15
US11405958
-

Conductive memory device with conductive oxide electrodes

#14 | 2008-02-05
US10665882
-

Resistive memory device with a treated interface

#15 | 2008-01-03
US20080002483A1
Physics

Two terminal memory array having reference cells

#16 | 2008-01-03
US20080002473A1
Physics

Two terminal memory array having reference cells

#17 | 2008-01-03
US20080002461A1
Physics

Two terminal memory array having reference cells

#18 | 2007-07-12
US20070158716A1
Electricity

Conductive memory stack with sidewall

#19 | 2007-03-06
US10605977
-

Conductive memory stack with sidewall

#20 | 2006-11-02
US20060245243A1
Electricity

Multi-resistive state element with reactive metal

#21 | 2006-11-02
US20060245241A1
Physics

Two terminal memory array having reference cells

#22 | 2006-08-03
US20060171200A1
Electricity

Memory using mixed valence conductive oxides

#23 | 2006-07-27
US20060166430A1
Physics

Conductive memory stack with non-uniform width

#24 | 2006-07-18
US10612733
-

Layout of driver sets in a cross point memory array

#25 | 2006-07-04
US10604606
-

Multi-resistive state material that uses dopants

#26 | 2006-06-27
US10682277
-

Conductive memory device with conductive oxide electrodes

#27 | 2006-06-06
US10612776
-

Cross point memory array with fast access time

#28 | 2006-05-09
US10765406
-

Memory array with high temperature wiring

#29 | 2006-05-02
US10634636
-

2-terminal trapped charge memory device with voltage switchable multi-level resistance

#30 | 2006-03-07
US10612263
-

Line drivers that use minimal metal layers

#31 | 2006-02-09
US20060028864A1
Physics

Enhanced functionality in a two-terminal memory array

#32 | 2006-02-02
US20060023495A1
Physics

High-density NVRAM

#33 | 2006-01-26
US20060018149A1
Physics

Two terminal memory array having reference cells

#34 | 2005-11-29
US10330170
-

Providing a reference voltage to a cross point memory array

#35 | 2005-11-15
US10605757
-

Multi-layer conductive memory device

#36 | 2005-11-03
US20050243595A1
Physics

Memory element having islands

#37 | 2005-10-20
US20050231992A1
Physics

Re-writable memory with multiple memory layers

#38 | 2005-08-11
US20050174835A1
Electricity

Multi-resistive state element with reactive metal

#39 | 2005-07-12
US10360005
-

High-density NVRAM

#40 | 2005-06-14
US10612191
-

Re-writable memory with multiple memory layers

#41 | 2005-05-26
US20050111263A1
Physics

Cross point array using distinct voltages

#42 | 2005-05-12
US20050101086A1
Physics

Conductive memory stack with non-uniform width

#43 | 2005-03-22
US10604556
-

Re-writable memory with non-linear memory element

#44 | 2005-02-01
US10330900
-

Cross point memory array with memory plugs exhibiting a characteristic hysteresis

#45 | 2005-01-20
US20050013172A1
Physics

Multiple modes of operation in a cross point array

InventorID:

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