MOUNTAIN VIEW, California
United States
45
2012-04-12
The entities that hold a legal rights for patent applications filed by inventor LONGCOR STEVEN W.:
STEVEN W. LONGCOR from MOUNTAIN VIEW, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Two Terminal Re Writeable Non Volatile Ion Transport Memory Device
#2 | 2012-03-15Method for fabricating multi-resistive state memory devices
#3 | 2011-12-29Memory device using ion implant isolated conductive metal oxide
#4 | 2011-12-29Memory Device Using A Dual Layer Conductive Metal Oxide Structure
#5 | 2011-08-25Method of making a planar electrode
#6 | 2011-08-04Multi-resistive state memory device with conductive oxide electrodes
#7 | 2010-11-16Method of making a planar electrode
#8 | 2010-06-24Memory cell formation using ion implant isolated conductive metal oxide
#9 | 2010-06-24Multi-resistive state memory device with conductive oxide electrodes
#10 | 2009-02-19Multi-resistive state memory device with conductive oxide electrodes
#11 | 2009-01-15Selection device for re-writable memory
#12 | 2008-11-27Method for fabricating multi-resistive state memory devices
#13 | 2008-07-15Conductive memory device with conductive oxide electrodes
#14 | 2008-02-05Resistive memory device with a treated interface
#15 | 2008-01-03Two terminal memory array having reference cells
#16 | 2008-01-03Two terminal memory array having reference cells
#17 | 2008-01-03Two terminal memory array having reference cells
#18 | 2007-07-12Conductive memory stack with sidewall
#19 | 2007-03-06Conductive memory stack with sidewall
#20 | 2006-11-02Multi-resistive state element with reactive metal
#21 | 2006-11-02Two terminal memory array having reference cells
#22 | 2006-08-03Memory using mixed valence conductive oxides
#23 | 2006-07-27Conductive memory stack with non-uniform width
#24 | 2006-07-18Layout of driver sets in a cross point memory array
#25 | 2006-07-04Multi-resistive state material that uses dopants
#26 | 2006-06-27Conductive memory device with conductive oxide electrodes
#27 | 2006-06-06Cross point memory array with fast access time
#28 | 2006-05-09Memory array with high temperature wiring
#29 | 2006-05-022-terminal trapped charge memory device with voltage switchable multi-level resistance
#30 | 2006-03-07Line drivers that use minimal metal layers
#31 | 2006-02-09Enhanced functionality in a two-terminal memory array
#32 | 2006-02-02High-density NVRAM
#33 | 2006-01-26Two terminal memory array having reference cells
#34 | 2005-11-29Providing a reference voltage to a cross point memory array
#35 | 2005-11-15Multi-layer conductive memory device
#36 | 2005-11-03Memory element having islands
#37 | 2005-10-20Re-writable memory with multiple memory layers
#38 | 2005-08-11Multi-resistive state element with reactive metal
#39 | 2005-07-12High-density NVRAM
#40 | 2005-06-14Re-writable memory with multiple memory layers
#41 | 2005-05-26Cross point array using distinct voltages
#42 | 2005-05-12Conductive memory stack with non-uniform width
#43 | 2005-03-22Re-writable memory with non-linear memory element
#44 | 2005-02-01Cross point memory array with memory plugs exhibiting a characteristic hysteresis
#45 | 2005-01-20Multiple modes of operation in a cross point array
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