Gyeonggi-do
South Korea
33
2012-12-20
The entities that hold a legal rights for patent applications filed by inventor Lee Chang Sub:
Chang Sub Lee from Gyeonggi-do, KR has applied for patents for these inventions. The list has both pending applications and granted patents:
Mobile communication terminal and method of selecting menu and item
#2 | 2012-05-10Mobile communication terminal and method of selecting menu and item
#3 | 2011-05-12Methods of fabricating non-volatile memory devices including double diffused junction regions
#4 | 2011-04-07Metal Oxide Semiconductor Field Effect Transistors (MOSFETS) Including Recessed Channel Regions
#5 | 2011-02-03Mobile communication terminal and method of selecting menu and item
#6 | 2010-08-19IMAGE SENSOR HAVING 3-DIMENSIONAL TRANSFER TRANSISTOR AND ITS METHOD OF MANUFACTURE
#7 | 2009-08-27Methods of fabricating semiconductor devices with enlarged recessed gate electrodes
#8 | 2008-09-18Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the same
#9 | 2008-06-03Methods of fabricating field effect transistors having multiple stacked channels
#10 | 2008-04-24SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
#11 | 2008-04-24Non-volatile memory devices including double diffused junction regions
#12 | 2008-04-17Methods of fabricating field effect transistors having multiple stacked channels
#13 | 2008-04-03Semiconductor memory devices and methods for forming the same
#14 | 2008-03-27Mobile communication terminal and method of selecting menu and item
#15 | 2007-05-03MOS Transistors having inverted T-shaped gate electrodes and fabrication methods thereof
#16 | 2007-03-15Semiconductor devices with enlarged recessed gate electrodes
#17 | 2006-12-26MOS transistors having inverted T-shaped gate electrodes
#18 | 2006-12-12Semiconductor devices with enlarged recessed gate electrodes
#19 | 2006-08-31Self-aligned semiconductor contact structures
#20 | 2006-08-03Self-aligned semiconductor contact structures and methods for fabricating the same
#21 | 2006-08-03Buried channel type transistor having a trench gate and method of manufacturing the same
#22 | 2006-07-06Image sensor having 3-dimensional transfer transistor and its method of manufacture
#23 | 2006-07-04Self-aligned semiconductor contact structures and methods for fabricating the same
#24 | 2006-06-15Methods of forming integrated circuits structures including epitaxial silicon layers in active regions
#25 | 2006-06-13Buried channel type transistor having a trench gate and method of manufacturing the same
#26 | 2006-03-23Recess gate-type semiconductor device and method of manufacturing the same
#27 | 2006-03-21Integrated circuit structures including epitaxial silicon layers that extend from an active region through an insulation layer to a substrate
#28 | 2006-02-21Field effect transistors having multiple stacked channels
#29 | 2005-10-04Methods of forming field effect transistors including raised source/drain regions
#30 | 2005-09-06Double gate MOS transistors
#31 | 2005-09-01Field effect transistors having multiple stacked channels
#32 | 2005-04-14Methods of forming multi fin FETs using sacrificial fins and devices so formed
#33 | 2005-01-06Methods of etching intermediate silicon germanium layers using ion implantation to promote selectivity
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