Inventor profile of:

Ming Xi

City:

Milpitas, California

Country:

United States

Published Applications:

23

Last publication date:

2012-07-12

Top Assignees for applications by Ming Xi

The entities that hold a legal rights for patent applications filed by inventor Xi Ming:

Recent patent applications by Xi Ming

Ming Xi from Milpitas, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-07-12
US20120178256A1
Chemistry; metallurgy

Formation of a tantalum-nitride layer

#2 | 2010-12-09
US20100311237A1
Chemistry; metallurgy

Formation of a tantalum-nitride layer

#3 | 2009-06-18
US20090156004A1
Electricity

Method for forming tungsten materials during vapor deposition processes

#4 | 2009-06-18
US20090156003A1
Chemistry; metallurgy

Method for depositing tungsten-containing layers by vapor deposition techniques

#5 | 2008-12-25
US20080317954A1
Electricity

Pulsed deposition process for tungsten nucleation

#6 | 2008-09-18
US20080227291A1
Chemistry; metallurgy

Formation of composite tungsten films

#7 | 2007-11-01
US20070254481A1
Electricity

Method for forming tungsten materials during vapor deposition processes

#8 | 2007-09-20
US20070218688A1
Chemistry; metallurgy

Method for depositing tungsten-containing layers by vapor deposition techniques

#9 | 2007-07-05
US20070151861A1
Electricity

RELIABILITY BARRIER INTEGRATION FOR CU APPLICATION

#10 | 2007-05-01
US10194629
-

Pulsed nucleation deposition of tungsten layers

#11 | 2007-04-10
US10731651
-

Valve control system for atomic layer deposition chamber

#12 | 2006-12-28
US20060292874A1
Electricity

Method for forming tungsten materials during vapor deposition processes

#13 | 2006-11-23
US20060264031A1
Chemistry; metallurgy

Method for depositing tungsten-containing layers by vapor deposition techniques

#14 | 2006-09-05
US9678266
-

Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer

#15 | 2006-06-15
US20060128132A1
Electricity

Method and system for controlling the presence of fluorine in refractory metal layers

#16 | 2006-04-13
US20060075966A1
Chemistry; metallurgy

Apparatus and method for plasma assisted deposition

#17 | 2006-04-11
US10052681
-

Reliability barrier integration for Cu application

#18 | 2006-02-14
US10197940
-

Apparatus and method for plasma assisted deposition

#19 | 2006-02-09
US20060030148A1
Chemistry; metallurgy

Formation of a tantalum-nitride layer

#20 | 2005-10-04
US9776329
-

Formation of a tantalum-nitride layer

#21 | 2005-09-06
US10299212
-

Formation of composite tungsten films

#22 | 2005-07-28
US20050164487A1
Chemistry; metallurgy

Formation of a tantalum-nitride layer

#23 | 2005-03-17
US20050059241A1
Electricity

Method and system for controlling the presence of fluorine in refractory metal layers

InventorID:

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