Milpitas, California
United States
23
2012-07-12
The entities that hold a legal rights for patent applications filed by inventor Xi Ming:
Ming Xi from Milpitas, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Formation of a tantalum-nitride layer
#2 | 2010-12-09Formation of a tantalum-nitride layer
#3 | 2009-06-18Method for forming tungsten materials during vapor deposition processes
#4 | 2009-06-18Method for depositing tungsten-containing layers by vapor deposition techniques
#5 | 2008-12-25Pulsed deposition process for tungsten nucleation
#6 | 2008-09-18Formation of composite tungsten films
#7 | 2007-11-01Method for forming tungsten materials during vapor deposition processes
#8 | 2007-09-20Method for depositing tungsten-containing layers by vapor deposition techniques
#9 | 2007-07-05RELIABILITY BARRIER INTEGRATION FOR CU APPLICATION
#10 | 2007-05-01Pulsed nucleation deposition of tungsten layers
#11 | 2007-04-10Valve control system for atomic layer deposition chamber
#12 | 2006-12-28Method for forming tungsten materials during vapor deposition processes
#13 | 2006-11-23Method for depositing tungsten-containing layers by vapor deposition techniques
#14 | 2006-09-05Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
#15 | 2006-06-15Method and system for controlling the presence of fluorine in refractory metal layers
#16 | 2006-04-13Apparatus and method for plasma assisted deposition
#17 | 2006-04-11Reliability barrier integration for Cu application
#18 | 2006-02-14Apparatus and method for plasma assisted deposition
#19 | 2006-02-09Formation of a tantalum-nitride layer
#20 | 2005-10-04Formation of a tantalum-nitride layer
#21 | 2005-09-06Formation of composite tungsten films
#22 | 2005-07-28Formation of a tantalum-nitride layer
#23 | 2005-03-17Method and system for controlling the presence of fluorine in refractory metal layers
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