Inventor profile of:

Jang-eun Lee

City:

Suwon-si

Country:

South Korea

Published Applications:

20

Last publication date:

2024-09-12

Top Assignees for applications by Jang-eun Lee

The entities that hold a legal rights for patent applications filed by inventor Lee Jang-eun:

Recent patent applications by Lee Jang-eun

Jang-eun Lee from Suwon-si, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-09-12
US20240306370A1
Electricity

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

#2 | 2014-05-08
US20140124727A1
Electricity

Nonvolatile memory devices and methods of forming the same

#3 | 2013-07-04
US20130171743A1
Electricity

MAGNETIC DEVICE AND METHOD OF MANUFACTURING THE SAME

#4 | 2012-11-22
US20120292724A1
Electricity

Magnetic device

#5 | 2012-05-31
US20120135543A1
Electricity

Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same

#6 | 2011-11-10
US20110272380A1
Electricity

Methods of forming pattern structures

#7 | 2011-08-04
US20110189851A1
Electricity

Method of fabricating semiconductor device

#8 | 2010-08-26
US20100213558A1
Physics

Magnetic memory device

#9 | 2009-08-20
US20090206427A1
Electricity

Magnetic memory device and method of fabricating the same

#10 | 2008-10-02
US20080237693A1
Electricity

Storage of non-volatile memory device and method of forming the same

#11 | 2008-08-21
US20080197336A1
Electricity

Nonvolatile memory devices and methods of forming the same

#12 | 2008-06-26
US20080153179A1
Physics

Magnetic random access memory device and method of forming the same

#13 | 2008-05-22
US20080118993A1
Electricity

Method of manufacturing magnetic random access memory (MRAM)

#14 | 2007-10-11
US20070238031A1
Electricity

Method for forming minute pattern and method for forming semiconductor memory device using the same

#15 | 2007-08-02
US20070176251A1
Electricity

Magnetic memory device and method of fabricating the same

#16 | 2006-08-10
US20060174473A1
Physics

Magnetic random access memory device and method of forming the same

#17 | 2006-02-23
US20060040485A1
Electricity

Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures

#18 | 2006-02-23
US20060039190A1
Physics

Method of writing to MRAM devices

#19 | 2005-10-20
US20050230771A1
Physics

Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof

#20 | 2005-07-07
US20050146967A1
Electricity

Magnetic random access memory (MRAM) and method of manufacturing the same

InventorID:

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