Inventor profile of:

Darryl J. Morrison

City:

Calgary

Country:

Canada

Published Applications:

15

Last publication date:

2019-08-08

Top Assignees for applications by Darryl J. Morrison

The entities that hold a legal rights for patent applications filed by inventor Morrison Darryl J.:

Recent patent applications by Morrison Darryl J.

Darryl J. Morrison from Calgary, CA has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-08-08
US20190241683A1
Chemistry; metallurgy

Thermally tunable phosphinimine catalysts

#2 | 2018-03-22
US20180079846A1
Chemistry; metallurgy

Catalyst modification to control polymer architecture

#3 | 2017-08-31
US20170247485A1
Chemistry; metallurgy

Passivated supports: catalyst, process, product and film

#4 | 2017-02-09
US20170037162A1
Chemistry; metallurgy

Catalyst modification to control polymer architecture

#5 | 2015-11-19
US20150329658A1
Chemistry; metallurgy

Passivated supports for use with olefin polymerization catalysts

#6 | 2015-11-05
US20150315314A1
Chemistry; metallurgy

Ethylene copolymer compositions, film and polymerization processes

#7 | 2015-09-10
US20150252159A1
Chemistry; metallurgy

Ethylene copolymers, film and polymerization process

#8 | 2014-04-10
US20140100343A1
Chemistry; metallurgy

Ethylene copolymer compositions, film and polymerization processes

#9 | 2013-12-26
US20130345377A1
Chemistry; metallurgy

Ethylene copolymers, film and polymerization process

#10 | 2013-11-21
US20130310590A1
Chemistry; metallurgy

Ligand synthesis

#11 | 2013-07-04
US20130172500A1
Chemistry; metallurgy

Passivated supports for use with olefin polymerization catalysts

#12 | 2009-01-01
US20090004385A1
Chemistry; metallurgy

Copper precursors for deposition processes

#13 | 2008-10-02
US20080241423A1
Electricity

High K dielectric growth on metal triflate or trifluoroacetate terminated III-V semiconductor surfaces

#14 | 2008-07-03
US20080160204A1
Electricity

Spontaneous copper seed deposition process for metal interconnects

#15 | 2008-07-03
US20080160176A1
Chemistry; metallurgy

Method of fabricating iridium layer with volatile precursor

InventorID:

326011 ⎘