Poughkeepsie, New York
United States
20
2012-11-22
The entities that hold a legal rights for patent applications filed by inventor Chen Xiaomeng:
Xiaomeng Chen from Poughkeepsie, US has applied for patents for these inventions. The list has both pending applications and granted patents:
CMOS devices incorporating hybrid orientation technology (HOT) with embedded connectors
#2 | 2010-11-04Method for reducing amine based contaminants
#3 | 2010-08-05Multiple crystallographic orientation semiconductor structures
#4 | 2010-01-14Methods for forming high performance gates and structures thereof
#5 | 2009-12-31Structures, fabrication methods, design structures for strained fin field effect transistors (FinFets)
#6 | 2009-12-31CMOS devices incorporating hybrid orientation technology (HOT) with embedded connectors
#7 | 2009-11-19CMOS STRUCTURE INCLUDING PROTECTIVE SPACERS AND METHOD OF FORMING THEREOF
#8 | 2009-10-15FINFET DEVICES FROM BULK SEMICONDUCTOR AND METHODS FOR MANUFACTURING THE SAME
#9 | 2009-04-30Multiple crystallographic orientation semiconductor structures
#10 | 2008-09-18SUBGROUND RULE STI FILL FOR HOT STRUCTURE
#11 | 2008-08-07Semiconductor substrate with multiple crystallographic orientations
#12 | 2008-07-17Subground rule STI fill for hot structure
#13 | 2008-07-03STRESS LINER SURROUNDED FACETLESS EMBEDDED STRESSOR MOSFET
#14 | 2008-05-29Semiconductor structure having undercut-gate-oxide gate stack enclosed by protective barrier material
#15 | 2008-04-10Semiconductor structures including multiple crystallographic orientations and methods for fabrication thereof
#16 | 2008-03-13CMOS devices incorporating hybrid orientation technology (HOT) with embedded connectors
#17 | 2008-03-06Method of making a semiconductor structure
#18 | 2007-02-01Method for reducing amine based contaminants
#19 | 2006-12-26Method for reducing amine based contaminants
#20 | 2005-05-05Semiconductor structure having reduced amine-based contaminants
3297907 ⎘