Inventor profile of:

Mark Helm

City:

Boise, Idaho

Country:

United States

Published Applications:

19

Last publication date:

2012-11-29

Top Assignees for applications by Mark Helm

The entities that hold a legal rights for patent applications filed by inventor Helm Mark:

Recent patent applications by Helm Mark

Mark Helm from Boise, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2012-11-29
US20120300551A1
Physics

Non-volatile memory cell healing

#2 | 2011-05-26
US20110124178A1
Electricity

Structure and method of fabricating a transistor having a trench gate

#3 | 2011-01-13
US20110006372A1
Electricity

Formation of standard voltage threshold and low voltage threshold MOSFET devices

#4 | 2010-07-01
US20100165747A1
Physics

Non-volatile memory cell healing

#5 | 2009-11-19
US20090286366A1
Electricity

Formation of standard voltage threshold and low voltage threshold MOSFET devices

#6 | 2009-01-01
US20090003061A1
Physics

Select gate transistors and methods of operating the same

#7 | 2008-12-04
US20080298123A1
Physics

Non-volatile memory cell healing

#8 | 2008-08-21
US20080200005A1
Electricity

Structure and method of fabricating a transistor having a trench gate

#9 | 2008-06-26
US20080151646A1
Physics

Flash memory device with improved erase operation

#10 | 2008-02-21
US20080042216A1
Electricity

Formation of standard voltage threshold and low voltage threshold MOSFET devices

#11 | 2007-04-26
US20070093017A1
Electricity

Formation of standard voltage threshold and low voltage threshold MOSFET devices

#12 | 2007-04-26
US20070093016A1
Electricity

Formation of standard voltage threshold and low voltage threshold MOSFET devices

#13 | 2006-01-19
US20060011948A1
Electricity

Structure and method of fabricating a transistor having a trench gate

#14 | 2006-01-05
US20060003513A1
Electricity

Formation of standard voltage threshold and low voltage threshold MOSFET devices

#15 | 2005-10-13
US20050227427A1
Electricity

Formation of standard voltage threshold and low voltage threshold MOSFET devices

#16 | 2005-06-09
US20050124118A1
Electricity

Structure and method of fabricating a transistor having a trench gate

#17 | 2005-05-19
US20050104122A1
Electricity

Structure and method of fabricating a transistor having a trench gate

#18 | 2005-02-03
US20050026352A1
Electricity

Formation of standard voltage threshold and low voltage threshold MOSFET devices

#19 | 2005-02-01
US10191337
-

Method for forming standard voltage threshold and low voltage threshold MOSFET devices

InventorID:

3303147 ⎘