Inventor profile of:

Li Wang

City:

Jiang Xi

Country:

China

Published Applications:

13

Last publication date:

2011-06-23

Top Assignees for applications by Li Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Li:

Recent patent applications by Wang Li

Li Wang from Jiang Xi, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2011-06-23
US20110147705A1
Electricity

SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH SILICONE PROTECTIVE LAYER

#2 | 2011-02-10
US20110031472A1
Electricity

Semiconductor light-emitting device with a highly reflective ohmic-electrode

#3 | 2011-01-13
US20110006319A1
Electricity

Gallium nitride light-emitting device with ultra-high reverse breakdown voltage

#4 | 2011-01-06
US20110001120A1
Electricity

Semiconductor light-emitting device with double-sided passivation

#5 | 2010-09-02
US20100219394A1
Electricity

Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature

#6 | 2010-08-19
US20100207096A1
Electricity

Method for fabricating highly reflective ohmic contact in light-emitting devices

#7 | 2008-12-25
US20080315212A1
Electricity

Method for fabricating a p-type semiconductor structure

#8 | 2008-10-30
US20080265265A1
Electricity

InGaAIN light-emitting device containing carbon-based substrate and method for making the same

#9 | 2008-10-09
US20080248633A1
Electricity

Method for manufacturing indium gallium aluminium nitride thin film on silicon substrate

#10 | 2008-09-25
US20080230799A1
Electricity

Semiconductor light-emitting device with electrode for N-polar InGaAIN surface

#11 | 2008-09-25
US20080230792A1
Electricity

Semiconductor light-emitting device and method for making same

#12 | 2008-09-18
US20080224154A1
Electricity

Semiconductor light-emitting device with metal support substrate

#13 | 2008-09-04
US20080210951A1
Electricity

Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates

InventorID:

3324894 ⎘