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Inventor profile of:

Dumitru Sdrulla

City:

Bend, Oregon

Country:

United States

Published Applications:

Last publication date:

2020-12-10

Top Assignees for applications by Dumitru Sdrulla

The entities that hold a legal rights for patent applications filed by inventor Sdrulla Dumitru:

MICROSEMI CORPORATION 11 Bend, OR United States
MICROSEMI CORP. -POWER PRODUCTS GROUP 1 Bend, OR United States
Microsemi Corporation 1 Chandler, AZ United States
Microchip Technology Inc. 1 Chandler, AZ United States
Advanced Power Technology, Inc. 1 Bend, OR United States

Recent patent applications by Sdrulla Dumitru

Dumitru Sdrulla from Bend, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-12-10

US20200388670A1

Electricity

Space efficient high-voltage termination and process for fabricating same

#2 | 2019-02-21

US20190058032A1

Electricity

Semiconductor device with improved field layer

#3 | 2016-05-05

US20160126306A1

Electricity

SiC transient voltage suppressor

#4 | 2014-11-20

US20140339625A1

Electricity

PSEUDO SELF ALIGNED RADHARD MOSFET AND PROCESS OF MANUFACTURE

#5 | 2014-03-06

US20140065778A1

Electricity

Low loss SiC MOSFET

#6 | 2013-11-28

US20130313570A1

Electricity

MONOLITHICALLY INTEGRATED SIC MOSFET AND SCHOTTKY BARRIER DIODE

#7 | 2013-10-03

US20130256698A1

Electricity

Low loss SiC MOSFET

#8 | 2013-07-18

US20130181280A1

Electricity

Pseudo self aligned radhard MOSFET and process of manufacture

#9 | 2013-07-02

US13030907

High reliability-high voltage junction termination with charge dissipation layer

#10 | 2013-05-07

US13231877

SiC power vertical DMOS with increased safe operating area

#11 | 2011-02-17

US20110037139A1

Electricity

SCHOTTKY BARRIER DIODE (SBD) AND ITS OFF-SHOOT MERGED PN/SCHOTTKY DIODE OR JUNCTION BARRIER SCHOTTKY (JBS) DIODE

#12 | 2010-12-14

US12365083

Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode

#13 | 2009-03-19

US20090072340A1

Electricity

Edge termination for high voltage semiconductor device

#14 | 2007-05-03

US20070096237A1

Electricity

Design and fabrication of rugged FRED, power MOSFET or IGBT

#15 | 2007-01-30

US10757028

Design and fabrication of rugged FRED

InventorID:

340866 ⎘